BSL316C OptiMOS 2 + OptiMOS-P 2 Small Signal Transistor Product Summary Features P N Complementary P + N channel V -30 30 V DS Enhancement mode R V =10 V 150 160 mW DS(on),max GS Logic level (4.5V rated) V =4.5 V 270 280 GS Avalanche rated I -1.5 1.4 A D Qualified according to AEC Q101 100% lead-free RoHS compliant PG-TSOP6 Halogen free according to IEC61249-2-21 6 5 4 1 2 3 Type Package Tape and Reel Information Marking Lead Free Packing BSL316C PG-TSOP-6 H6327: 3000 pcs / reel sPJ Yes Non dry 1) Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit P N Continuous drain current I T =25C -1.5 1.4 A D A T =70C -1.2 1.1 A I T =25C Pulsed drain current -6.0 5.6 D,pulse A P: I =-1.5A, D E N: I =1.4A, Avalanche energy, single pulse 11 3.7 mJ AS D R =25W GS V 20 Gate source voltage V GS 1) P T =25C 0.5 W Power dissipation tot A Operating and storage temperature T , T -55 ... 150 C j stg 0 (<250V) ESD class JESD22-A114-HBM T 260 Soldering temperature C solder IEC climatic category DIN IEC 68-1 55/150/56 1) Remark: only one of both transistors active Rev. 2.3 page 1 2014-07-21BSL316C Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics P Thermal resistance, junction - 2) R - - 250 K/W thJA minimal footprint 1) ambient N Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0V, I =-250A Drain-source breakdown voltage P - - -30 V (BR)DSS GS D N V =0V, I =250A 30 - - GS D V V =V , I =-11A Gate threshold voltage P -2 -1.5 -1 GS(th) DS GS D V =V , I =3.7A N 1.2 1.6 2 DS GS D V =-30V, V =0V, DS GS I Zero gate voltage drain current P - - -1 A DSS T =25C j V =30V, V =0V, DS GS N - - 1 T =25C j V =-30V, V =0V, DS GS P - - -100 T =150C j V =30V, V =0V, DS GS N - - 100 T =150C j Gate-source leakage current P I V =20V, V =0V - - 100 nA GSS GS DS N V =-4.5V, I =- GS D R P - 177 270 mW DS(on) 1.1A Drain-source on-state resistance V =4.5V, I =-1.1A N - 191 280 GS D V =-10V, I =-1.5A P - 113 150 GS D N V =10V, I =1.4A - 119 160 GS D V >2 I R , DS D DS(on)max g Transconductance P - 2.7 - S fs I =-1.18A D V >2 I R , DS D DS(on)max N - 2.3 - I =1.1A D 2) 2 Performed on 40mm FR4 PCB. The traces are 1mm wide, 70 m thick and 20mm long they are present on both sides of the PCB Rev. 2.3 page 2 2014-07-21