BSL373SNH6327XTSA1 Infineon

Mosfet Metal Oxide Semiconductor Field Effect Transistor OptiMOS Small-Signal-Transistor, 100V BSL373SN Data Sheet Rev. 2.0 Final Industrial & MultimarketBSL373SN OptiMOS Small-Signal-Transistor Product Summary Features V 100 V DS N-channel R 0.23 DS(on),max Enhancement mode I 2.0 A D Avalanche rated Qualified according to AEC Q101 RoHS compliant TSOP6 Halogen-free acording to IEC61249-2-21 6 5 4 1 2 3 Type Package Tape and Reel Info Marking Halogen Free Packing BSL373SN TSOP6 H6327: 3000 pcs/ reel sPY Yes Non dry Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit I T =25 C Continuous drain current 2.0 A D A T =70 C 1.6 A I T =25 C Pulsed drain current 8.0 D,pulse A Avalanche energy, single pulse E I =2 A, R =25 33 mJ AS D GS I =2 A, V =50 V, D DS Reverse diode dv /dt dv /dt di /dt =200 A/s, 6 kV/s T =150 C j,max Gate source voltage V 20 V GS 1) P T =25 C 2.0 W Power dissipation tot A T , T Operating and storage temperature -55 ... 150 C j stg ESD Class JESD22-A114 -HBM 0 (<250V) Soldering Temperature 260 C IEC climatic category DIN IEC 68-1 55/150/56 Rev 2.0 page 1 2014-10-16