BSL606SN OptiMOS -3 Small-Signal-Transistor Product Summary Features V 60 V DS N-channel R V =10 V 60 mW DS(on),max GS Enhancement mode V =4.5 V 95 GS Logic level (4.5V rated) I 4.5 A D Avalanche rated Qualified according to AEC Q101 PG-TSOP-6 100%lead-free Halogen-free RoHS compliant 6 5 4 1 2 3 Type Package Tape and Reel Info Marking Halogen-free Package BSL606SN PG-TSOP-6 H6327: 3000 pcs/reel sPW Yes Non-dry Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit I T =25C Continuous drain current 4.5 A D A T =70C 3.6 A I T =25C Pulsed drain current 18.1 D,pulse A E I =4.5A, R =25W Avalanche energy, single pulse 14 mJ AS D GS I =4.5A, V =16V, D DS Reverse diode dv /dt dv /dt di /dt =200A/s, 6 kV/s T =150C j,max Gate source voltage V 20 V GS 1) P T =25C 2.0 W Power dissipation tot A T , T Operating and storage temperature -55 ... 150 C j stg ESD Class JESD22-A114 -HBM class 0 (<250V) Soldering Temperature 260 C IEC climatic category DIN IEC 68-1 55/150/56 Rev 2.2 page 1 2013-04-05BSL606SN Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics 2 1) R SMD version, device on PCB - - 62.5 thJA 6cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0V, I =250A Drain-source breakdown voltage 60 - - V (BR)DSS GS D Gate threshold voltage V V =0V, I =15A 1.3 1.8 2.3 GS(th) DS D V =60V, V =0V, DS GS I Drain-source leakage current - - 1 mA DSS T =25C j V =60V, V =0V, DS GS - - 100 T =150C j I V =20V, V =0V Gate-source leakage current - - 100 nA GSS GS DS Drain-source on-state resistance R V =4.5V, I =3.6A - 69 95 mW DS(on) GS D V =10V, I =4.5A - 49 60 GS D V >2 I R , DS D DS(on)max Transconductance g 7.1 - S fs I =3.6A D 1) 2 Performed on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air t 5 sec. Rev 2.2 page 2 2013-04-05