BSL802SN OptiMOS2 Small-Signal-Transistor Product Summary Features V 20 V DS N-channel R V =2.5 V 22 mW DS(on),max GS Enhancement mode V =1.8 V 31 GS Ultra Logic level (1.8V rated) I 7.5 A D Avalanche rated Qualified according to AEC Q101 PG-TSOP6 100% lead-free RoHS compliant 6 5 Halogen free according to IEC61249-2-21 4 1 2 3 Type Package Tape and Reel Information Marking Lead Free Packing BSL802SN PG-TSOP6 H6327: 3000 pcs/ reel sPP Yes Non dry Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit Continuous drain current I T =25C 7.5 A D A T =70C 6.0 A I T =25C Pulsed drain current 30 D,pulse A E Avalanche energy, single pulse I =7.5A, R =25W 30 mJ AS D GS I =7.5A, V =16V, D DS Reverse diode dv /dt dv /dt di /dt =200A/s, 6 kV/s T =150C j,max V Gate source voltage 8 V GS 1) P T =25C 2 W Power dissipation tot A Operating and storage temperature T , T -55 ... 150 C j stg ESD Class JESD22-A114 -HBM 0 (<250V) Soldering Temperature 260 C IEC climatic category DIN IEC 68-1 55/150/56 Rev 2.3 page 1 2013-11-07BSL802SN Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, R - - 50 K/W thJS junction - minimal footprint SMD version, device on PCB R minimal footprint - - 230 thJA 2 1) - - 62.5 6 cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V = 0V, I =250 A Drain-source breakdown voltage 20 - - V (BR)DSS GS D V V =V , I =30A Gate threshold voltage 0.3 0.55 0.75 GS(th) DS GS D V =20V, V =0V, DS GS Drain-source leakage current I - - 1 mA DSS T =25C j V =20V, V =0V, DS GS - - 100 T =150C j Gate-source leakage current I V =8V, V =0V - - 100 nA GSS GS DS R V =1.8V, I =3.6A Drain-source on-state resistance - 23 31 mW DS(on) GS D V =2.5V, I =7.5A - 18 22 GS D V >2 I R , DS D DS(on)max g Transconductance 25 - S fs I =6A D 1) 2 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (single layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. (t < 5 sec.) Rev 2.3 page 2 2013-11-07