BSL806N OptiMOS 2 Small-Signal-Transistor Product Summary Features V 20 V DS Dual N-channel R V =2.5 V 57 mW DS(on),max GS Enhancement mode V =1.8 V 82 GS Ultra Logic level (1.8V rated) I 2.3 A D Avalanche rated Qualified according to AEC Q101 PG-TSOP6 100% lead-free RoHS compliant 6 5 4 Halogen free according to IEC61249-2-21 1 2 3 Type Package Tape and Reel Information Marking Lead Free Packing BSL806N PG-TSOP6 H6327: 3000 pcs/ reel sPO Yes Non dry Maximum ratings, at T =25 C, unless otherwise specified j (1) Symbol Conditions Value Unit Parameter I T =25C Continuous drain current 2.3 A D A T =70C 1.9 A Pulsed drain current I T =25C 9.3 D,pulse A Avalanche energy, single pulse E I =2.3A, R =25W 10.8 mJ AS D GS I =2.3A, V =16V, D DS Reverse diode dv /dt dv /dt di /dt =200A/s, 6 kV/s T =150C j,max V Gate source voltage 8 V GS 1) P T =25C 0.5 W Power dissipation tot A Operating and storage temperature T , T -55 ... 150 C j stg ESD Class JESD22-A114 -HBM 0 (<250V) Soldering Temperature 260 C IEC climatic category DIN IEC 68-1 55/150/56 1) Remark: one of both transistors active page 1 2013-11-07BSL806N Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, 2) R - - 250 K/W thJA minimal footprint junction - ambient Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics Drain-source breakdown voltage V V = 0V, I =250 A 20 - - V (BR)DSS GS D V V =V , I =11A Gate threshold voltage 0.3 0.55 0.75 GS(th) DS GS D V =20V, V =0V, DS GS I Drain-source leakage current - - 1 mA DSS T =25C j V =20V, V =0V, DS GS - - 100 T =150C j I V =8V, V =0V Gate-source leakage current - - 100 nA GSS GS DS Drain-source on-state resistance R V =1.8V, I =1.3A - 55 82 mW DS(on) GS D V =2.5V, I =2.3A - 40 57 GS D V >2 I R , DS D DS(on)max Transconductance g 9 - S fs I =1.9A D 2) 2 Performed on 40mm FR4 PCB. The traces are 1mm wide, 70 m thick and 20mm long they are present on both sides of the PCB. page 2 2013-11-07