BSO033N03MS G OptiMOS3 M-Series Power-MOSFET Product Summary Features V 30 V DS Optimized for 5V driver application (Notebook, VGA, POL) R V =10 V 3.3 m DS(on),max GS Low FOM for High Frequency SMPS SW V =4.5 V 3.8 GS 100% Avalanche tested I 22 A D N-channel Very low on-resistance R V =4.5 V DS(on) GS Excellent gate charge x R product (FOM) PG-DSO-8 DS(on) Qualified for consumer level application Pb-free plating RoHS compliant Halogen-free according to IEC61249-2-21 Type Package Marking BSO033N03MS G PG-DSO-8 033N03MS Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit 10 secs steady state 1) I V =10 V, T =25 C 22 17 A Continuous drain current D GS A V =10 V, T =90 C 15 12.1 GS A V =4.5 V, T =25 C 21 16 GS A V =4.5 V, T =90 C 14.3 11.3 GS A 2) I T =25 C 154 Pulsed drain current D,pulse A 3) I T =25 C 22 Avalanche current, single pulse AS A E Avalanche energy, single pulse I =22 A, R =25 150 mJ AS D GS V 20 Gate source voltage V GS 1) P T =25 C 2.5 1.56 W Power dissipation tot A T , T -55 ... 150 Operating and storage temperature C j stg IEC climatic category DIN IEC 68-1 55/150/56 Rev.1.1 page 1 2009-11-19BSO033N03MS G Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, R - - 35 K/W thJS junction - soldering point minimal footprint, Thermal resistance, R - - 110 thJA junction - ambient t 10 s p minimal footprint, - - 150 steady state 2 1) 6 cm cooling area , -- 50 t 10 s p 2 1) 6 cm cooling area , -- 80 steady state Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0 V, I =1 mA Drain-source breakdown voltage 30 - - V (BR)DSS GS D Gate threshold voltage V V =V , I =250 A 1- 2 GS(th) DS GS D V =30 V, V =0 V, DS GS I Zero gate voltage drain current - 0.1 10 A DSS T =25 C j V =30 V, V =0 V, DS GS - 10 100 T =125 C j I V =16 V, V =0 V Gate-source leakage current - 10 100 nA GSS GS DS V =4.5 V, I =21 A Drain-source on-state resistance R - 3.0 3.8 m DS(on) GS D V =10 V, I =22 A - 2.8 3.3 GS D Gate resistance R 0.9 1.9 3.3 G V >2 I R , DS D DS(on)max g Transconductance 46 93 - S fs I =22 A D 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. 2) See figure 3 for more detailed information 3) See figure 13 for more detailed information Rev.1.1 page 2 2009-11-19