X-On Electronics has gained recognition as a prominent supplier of BSO080P03S H MOSFETs across the USA, India, Europe, Australia, and various other global locations. BSO080P03S H MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

BSO080P03S H Infineon

BSO080P03S H electronic component of Infineon
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Part No.BSO080P03S H
Manufacturer: Infineon
Category: MOSFETs
Description: MOSFET P-Ch -30V -14.9A DSO-8 OptiMOS P
Datasheet: BSO080P03S H Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.54 ea
Line Total: USD 1.54 
Availability - 1691
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
4
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 1
Multiples : 1
1 : USD 4.6692
10 : USD 4.0702
30 : USD 3.7154
100 : USD 3.3565
500 : USD 3.1906
1000 : USD 3.1142

1691
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 1.54
10 : USD 1.276
100 : USD 0.9636
250 : USD 0.9614
500 : USD 0.8107
1000 : USD 0.7986
2500 : USD 0.7788
5000 : USD 0.7667

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Gate Charge Qg
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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We are delighted to provide the BSO080P03S H from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BSO080P03S H and other electronic components in the MOSFETs category and beyond.

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BSO080P03S H OptiMOS-P Power-Transistor Product Summary Features V -30 V DS P-Channel R 8 m : DS(on),max Enhancement mode I -14.9 A D Logic level 150C operating temperature PG-DSO-8 Qualified according JEDEC for target applications Pb-free lead plating RoHS compliant Halogen-free according to IEC61249-2-21 Type Package Marking lead free Halogen free packing dry BSO080P03S H P-DSO-8 080P3S Yes Yes Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit 10 secs steady state 1) Continuous drain current I -14.9 -12.6 A D T =25 C A 1) T -11.9 -10 =70 C A 2) Pulsed drain current I T =25 C -60 D,pulse A E I =-14.9 A, R =25 : 248 Avalanche energy, single pulse mJ AS D GS Gate source voltage V 25 V GS 1) Power dissipation P 2.5 1.79 W tot T =25 C A Operating and storage temperature T , T -55 ... 150 C j stg ESD class JESD22-A114 HBM Soldering temperature 260 IEC climatic category DIN IEC 68-1 55/150/56 Rev. 1.31 page 1 2010-02-10BSO080P03S H Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, R - - 35 K/W thJS junction - soldering point Thermal resistance, minimal footprint, R -- 110 thJA t 10 s junction - ambient p minimal footprint, -- 150 steady state 2 1) 6 cm cooling area , -- 50 t 10 s p 2 1) 6 cm cooling area , -- 70 steady state Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V Drain-source breakdown voltage V =0 V, I =-250 P A -30 - - V (BR)DSS GS D V =V , DS GS V Gate threshold voltage -1 -1.5 -2.2 GS(th) I =-250 A D V =-30 V, V =0 V, DS GS I Zero gate voltage drain current --0.1 -1 A DSS T =25 C j V =-30 V, V =0 V, DS GS - -10 -100 T =150 C j I V =-25 V, V =0 V Gate-source leakage current - - -100 nA GSS GS DS V =-10 V, GS Drain-source on-state resistance R -6.7 8.0 DS(on) I =-14.9 A D V >2 I R , DS D DS(on)max Transconductance g 22 43 - S fs I =-14.9 A D 1) 2 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.31 page 2 2010-02-10

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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