BSO150N03MD G OptiMOS 3 M-Series Power-MOSFET Product Summary Features V 30 V DS Dual N-channel R V =10 V 15 m DS(on),max GS Optimized for 5V driver application (Notebook, VGA, POL) V =4.5 V 18.2 GS Low FOM for High Frequency SMPS SW I 9.3 A D 100% Avalanche tested Very low on-resistance R V =4.5 V DS(on) GS Excellent gate charge x R product (FOM) PG-DSO-8 DS(on) Qualified for consumer level application Pb-free plating RoHS compliant Halogen-free according to IEC61249-2-21 Type Package Marking BSO150N03MD G PG-DSO-8 150N03MD Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit 10 secs steady state 1) I V =10 V, T =25 C 9.3 8 A Continuous drain current D GS A V =10 V, T =90 C 6.4 5.4 GS A V =4.5 V, T =25 C 8.4 7 GS A V =4.5 V, T =90 C 5.8 4.9 GS A 2) I T =25 C 65 Pulsed drain current D,pulse A 3) I T =25 C 9.3 Avalanche current, single pulse AS A E 20 Avalanche energy, single pulse I =9.3 A, R =25 mJ AS D GS Gate source voltage V 20 V GS 1) P T =25 C 2 1.4 W Power dissipation tot A Operating and storage temperature T , T -55 ... 150 C j stg 55/150/56 IEC climatic category DIN IEC 68-1 Rev.1.1 page 1 2009-11-19BSO150N03MD G Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, R - - 50 K/W thJS junction - soldering point minimal footprint, Thermal resistance, R - - 110 thJA junction - ambient t 10 s p minimal footprint, - - 150 steady state 2 1) 6 cm cooling area , - - 62.5 t 10 s p 2 1) 6 cm cooling area , -- 90 steady state Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0 V, I =1 mA Drain-source breakdown voltage 30 - - V (BR)DSS GS D Gate threshold voltage V V =V , I =250 A 1- 2 GS(th) DS GS D V =30 V, V =0 V, DS GS I Zero gate voltage drain current - 0.1 10 A DSS T =25 C j V =30 V, V =0 V, DS GS - 10 100 T =125 C j I V =16 V, V =0 V Gate-source leakage current - 10 100 nA GSS GS DS V =4.5 V, I =8.4 A Drain-source on-state resistance R - 14.6 18.2 m DS(on) GS D V =10 V, I =9.3 A - 12.5 15 GS D Gate resistance R 0.5 1.1 1.9 G V >2 I R , DS D DS(on)max g Transconductance 12 24 - S fs I =9.3 A D 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. One transistor active. 2) See figure 3 for more detailed information 3) See figure 13 for more detailed information Rev.1.1 page 2 2009-11-19