BSO200P03S H OptiMOS-P Power-Transistor Product Summary Features V -30 V DS P-Channel R 20 m DS(on),max Enhancement mode I -9.1 A D Logic level 150C operating temperature PG-DSO-8 Qualified according JEDEC for target applications Pb-free lead plating RoHS compliant Halogen-free according to IEC61249-2-21 Type Package Marking Lead free Halogen free packing BSO200P03S H PG-DSO-8 200P3S Yes Yes dry Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit 10 secs steady state 1) Continuous drain current I -9.1 -7.4 A D T =25 C A 1) T =70 C -7.3 -5.9 A 2) Pulsed drain current I -36.4 D,pulse T =25 C A E I =-9.1 A, R =25 98 Avalanche energy, single pulse mJ AS D GS Gate source voltage V 25 V GS 1) P Power dissipation T =25 C 2.36 1.56 W tot A Operating and storage temperature T , T -55 ... 150 C j stg ESD rating Soldering temperature 260 C 55/150/56 IEC climatic category DIN IEC 68-1 Rev. 1.3 page 1 2010-02-15BSO200P03S H Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, R - - 35 K/W thJS junction - soldering point minimal footprint, Thermal resistance, R - - 110 thJA junction - ambient t 10 s p minimal footprint, - - 150 steady state 2 1) 6 cm cooling area , -- 53 t 10 s p 2 1) 6 cm cooling area , -- 80 steady state Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics Drain-source breakdown voltage V V =0 V, I =-250 A -30 - - V (BR)DSS GS D V =V , DS GS V Gate threshold voltage -1 -1.5 GS(th) I =-100 A D V =-30 V, V =0 V, DS GS I Zero gate voltage drain current - -0.1 -1 A DSS T =25 C j V =-30 V, V =0 V, DS GS - -10 -100 T =125 C j I V =-25 V, V =0 V Gate-source leakage current - - -100 nA GSS GS DS R V =-10 V, I =-9.1 A Drain-source on-state resistance - 16.7 20.0 DS(on) GS D V >2 I R , DS D DS(on)max Transconductance g 11 18 - S fs I =-7.3 A D 1) 2 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.3 page 2 2010-02-15