BSO201SP H OptiMOS P-Power-Transistor Product Summary Features V -20 V DS single P-Channel in SO8 R V =4.5 V 8.0 m DS(on),max GS 1) Qualified according JEDEC for target applications V =2.5 V 12.9 GS 150C operating temperature I -14.9 A D Super Logic Level (2.5V rated) Pb-free plating RoHS compliant PG-DSO-8 Halogen-free according to IEC61249-2-21 Type Package Marking Packing Lead free Halogen free BSO201SP H PG-DSO-8 201SP Yes dry Yes Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit 10 secs steady state 1) I V =4.5 V, T =25 C 14.9 12.0 A Continuous drain current D GS A V =4.5 V, T =70 C 11.9 9.4 GS A V =2.5 V, T =25 C 11.8 9.3 GS A V =2.5 V, T =70 C 9.4 7.4 GS A 2) I T =25 C 59.6 Pulsed drain current D,pulse A E I =-14.9 A, R =25 248 Avalanche energy, single pulse mJ AS D GS V 12 Gate source voltage V GS 1) P T =25 C 2.5 1.6 W Power dissipation tot A T , T -55 ... 150 Operating and storage temperature C j stg ESD class JESD22-A114 HBM 1C (< 2 kV) 260 Soldering temperature C IEC climatic category DIN IEC 68-1 55/150/56 Rev.1.32 page 1 2009-12-21BSO201SP H Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, R - - 35 K/W thJS junction - soldering point Thermal resistance, minimal footprint, R - - 110 thJA junction - ambient t 10 s p minimal footprint, - - 150 steady state 2 1) 6 cm cooling area , -- 50 t 10 s p 2 1) 6 cm cooling area , -- 80 steady state Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V =0 V, I = - GS D Drain-source breakdown voltage V -20 - - V (BR)DSS 0.25 mA V V =V , I = -250 A Gate threshold voltage -0.6 -0.9 -1.2 GS(th) DS GS D V =-20 V, V =0 V, DS GS I Zero gate voltage drain current - 0.1 1 A DSS T =25 C j V =-20 V, V =0 V, DS GS - 10 100 T =150 C j I V = -12 V, V =0 V Gate-source leakage current - - -100 nA GSS GS DS R V =2.5 V, I =-11.8 A Drain-source on-state resistance - 10.3 12.9 m DS(on) GS D V =4.5 V, I =-14.9 A - 6.7 8.0 GS D Gate resistance R - 3.8 - G V >2 I R , DS D DS(on)max g Transconductance 40 71 - S fs I =-11.8 A D 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. 2) See figure 3 for more detailed information 3) See figure 13 for more detailed information Rev.1.32 page 2 2009-12-21