BSO203P H OptiMOS P-Power-Transistor Product Summary Features V -20 V DS dual P-Channel in SO8 R V =4.5 V 21 m DS(on),max GS Qualified according JEDEC for target applications V =2.5 V 34 GS 150C operating temperature I -8.2 A D Super Logic Level (2.5V rated) Pb-free plating RoHS compliant, Halogen-free according to IEC61249-2-21 PG-DSO-8 Type Package Marking Lead free Halogen free Packing Yes BSO203P H PG-DSO-8 203P Yes dry Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit 10 secs steady state 1) I V =4.5 V, T =25 C -8.2 -7.0 A Continuous drain current D GS A V =4.5 V, T =70 C -6.6 -5.8 GS A V =2.5 V, T =25 C -6.5 -5.7 GS A V =2.5 V, T =70 C -5.2 -4.6 GS A 2) I T =25 C -32.8 Pulsed drain current D,pulse A Avalanche energy, single pulse E I =-8.2 A, R =25 97 mJ AS D GS Gate source voltage V 12 V GS 1) P T =25 C 2.0 1.6 W Power dissipation tot A Operating and storage temperature T , T -55 ... 150 C j stg 1B (500V - 1 kV) ESD class JESD22-A114 HBM Soldering temperature 260 C 55/150/56 IEC climatic category DIN IEC 68-1 Rev.1.31 page 1 2010-02-15BSO203P H Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, R - - 50 K/W thJS junction - soldering point Thermal resistance, minimal footprint, R - - 110 thJA t 10 s junction - ambient p minimal footprint, - - 150 steady state 2 1) 6 cm cooling area , - - 62.5 t 10 s p 2 1) 6 cm cooling area , -- 80 steady state Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V =0 V, I = - GS D V Drain-source breakdown voltage -20 - - V (BR)DSS 0.25 mA V V =V , I = -100 A Gate threshold voltage -0.6 -0.9 -1.2 GS(th) DS GS D V = -20 V, V =0 V, DS GS I Zero gate voltage drain current - - -1 A DSS T =25 C j V = -20 V, V =0 V, DS GS - - -100 T =150 C j Gate-source leakage current I V = -12 V, V =0 V - - -100 nA GSS GS DS R V =2.5 V, I =-6.5 A Drain-source on-state resistance -22 34 m DS(on) GS D V =4.5 V, I =-8.2 A -15 21 GS D Gate resistance R - 3.3 - G V >2 I R , DS D DS(on)max Transconductance g 18 33 - S fs I =-6.5 A D 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. 2) See figure 3 for more detailed information 3) See figure 13 for more detailed information Rev.1.31 page 2 2010-02-15