X-On Electronics has gained recognition as a prominent supplier of BSO301SPHXUMA1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. BSO301SPHXUMA1 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

BSO301SPHXUMA1 Infineon

BSO301SPHXUMA1 electronic component of Infineon
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Part No.BSO301SPHXUMA1
Manufacturer: Infineon
Category: MOSFETs
Description: Transistor: P-MOSFET; unipolar; -30V; -12.6A; 1.79W; PG-DSO-8
Datasheet: BSO301SPHXUMA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2500: USD 0.9277 ea
Line Total: USD 2319.25 
Availability - 0
MOQ: 2500  Multiples: 2500
Pack Size: 2500
Availability Price Quantity
1237
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 10
Multiples : 1
10 : USD 1.0047
25 : USD 0.9911
100 : USD 0.9776
250 : USD 0.9641
500 : USD 0.9505
1000 : USD 0.9369

2425
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 2500
Multiples : 2500
2500 : USD 0.9854

2425
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 2500
Multiples : 2500
2500 : USD 0.9277

   
Manufacturer
Product Category
Technology
Case
Mounting
Polarisation
Type Of Transistor
Drain-Source Voltage
Gate-Source Voltage
Drain Current
On-State Resistance
Power Dissipation
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We are delighted to provide the BSO301SPHXUMA1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BSO301SPHXUMA1 and other electronic components in the MOSFETs category and beyond.

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BSO301SP H OptiMOS -P Power-Transistor Product Summary Features V -30 V DS P-Channel R 8.0 m DS(on),max V = 10 V GS Enhancement mode V = 4.5 V GS 12.0 A Logic level I -14.9 A D 150C operating temperature PG-DSO-8 Avalanche rated Qualified according JEDEC for target applications Pb-free lead plating RoHS compliant Halogen-free according to IEC61249-2-21 Type Package Marking Leadfree Halogen free packing BSO301SP H PG-DSO-8 301SP Yes Yes dry Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit 10 secs steady state 1) I Continuous drain current T =25 C -14.9 -12.6 A D A 1) -11.9 -10 T =70 C A 2) I -60 Pulsed drain current T =25 C D,pulse A Avalanche energy, single pulse E I =-14.9 A, R =25 248 mJ AS D GS V 20 Gate source voltage V GS 1) Power dissipation P T =25 C 2.5 1.79 W tot A T , T -55 ... 150 Operating and storage temperature C j stg ESD class JESD22-A114 HBM 1C (1kV - 2kV) 260 Soldering temperature C IEC climatic category DIN IEC 68-1 55/150/56 Rev. 1.32 page 1 2010-05-12BSO301SP H Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, R - - 35 K/W thJS junction - soldering point minimal footprint, Thermal resistance, R - - 110 thJA junction - ambient t 10 s p minimal footprint, - - 150 steady state 2 1) 6 cm cooling area , -- 50 t 10 s p 2 1) 6 cm cooling area , -- 80 steady state Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics Drain-source breakdown voltage V V =0 V, I =-250 A -30 - - V (BR)DSS GS D V =V , DS GS V Gate threshold voltage -1 -1.5 -2 GS(th) I =-250 A D V =-30 V, V =0 V, DS GS I Zero gate voltage drain current - -0.1 -1 A DSS T =25 C j V =-30 V, V =0 V, DS GS - -10 -100 T =125 C j I V =-20 V, V =0 V Gate-source leakage current - -10 -100 nA GSS GS DS R V =-4.5 V, I =-12 A Drain-source on-state resistance - 8.8 12 m DS(on) GS D R V =-10 V, I =-14.9 A Drain-source on-state resistance - 6.3 8.0 DS(on) GS D V >2 I R , DS D DS(on)max Transconductance g 22 44 - S fs I =-14.9 A D 1) 2 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.32 page 2 2010-05-12

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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