X-On Electronics has gained recognition as a prominent supplier of BSO303PHXUMA1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. BSO303PHXUMA1 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

BSO303PHXUMA1 Infineon

BSO303PHXUMA1 electronic component of Infineon
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See Product Specifications
Part No.BSO303PHXUMA1
Manufacturer: Infineon
Category: MOSFETs
Description: Transistor: P-MOSFET; unipolar; -30V; -7A; 2W; PG-DSO-8
Datasheet: BSO303PHXUMA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
658: USD 0.4802 ea
Line Total: USD 315.97 
Availability - 0
MOQ: 658  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 658
Multiples : 1
658 : USD 0.4802

0
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 4.2487
3 : USD 2.4394
5 : USD 1.5624
37 : USD 0.9866

   
Manufacturer
Product Category
Technology
Case
Mounting
Polarisation
Type Of Transistor
Gate-Source Voltage
Drain-Source Voltage
Drain Current
On-State Resistance
Power Dissipation
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We are delighted to provide the BSO303PHXUMA1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BSO303PHXUMA1 and other electronic components in the MOSFETs category and beyond.

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BSO303P H OptiMOS -P Small-Signal-Transistor Product Summary Features V -30 V DS Dual P-Channel in SO8 V =-10V R 21 m W GS DS(on),max Enhancement mode V =-4.5V 32 GS Logic level I -8.2 A D 150C operating temperature Qualified according JEDEC for target applications SO 8 Halogen-free according to IEC61249-2-21 Pb-free lead plating RoHS compliant Type Package Marking Lead free Halogen free Packing BSO303P H PG-DSO- 8 Yes 303P Yes dry Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit 10 secs steady state 1) I T =25C -8,2 -7,0 A Continuous drain current D C T =70C -6,6 -5,8 C 2) I T =25C -32,8 Pulsed drain current D,pulse C Avalanche energy, single pulse E I =-8.2A, R =25W 97 mJ AS D GS V 20 Gate source voltage V GS P T =25C 2 Power dissipation W tot A Operating and storage temperature T , T -55 ... 150 C j stg ESD class JESD22-A114 HBM 1B (500V - 1kV) 260 C Soldering temperature IEC climatic category DIN IEC 68-1 55/150/56 Rev. 1.3 page 1 2010-02-10BSO303P H Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics Thermal resistance, R - - 50 K/W thJS junction - soldering point minimal footprint, t< SMD version, device on PCB: R 10s 110 thJA minimal footprint, steady state 150 2 1) 6 cm cooling area - - 62,5 t<10s 2 1), 6 cm cooling area - - 80 steady state Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics Drain-source breakdown voltage V V =0V, I =-250A -30 - - V (BR)DSS GS D V V =V , I =-100A Gate threshold voltage -1 -1,5 -2 GS(th) DS GS D V =-30V, V =0V, DS GS Zero gate voltage drain current I - -0,1 -1 A DSS T =25C j V =-30V, V =0V, DS GS - -10 -100 T =150C j Gate-source leakage current I V =-20V, V =0V - - -100 nA GSS GS DS Drain-source on-state resistance R V =-4.5V, I =-6.6A - 25 32 mW DS(on) GS D V =-10V, I =-8.2A - 17 21 GS D V >2 I R , DS D DS(on)max g Transconductance 11 27 - S fs I =-6.6A D 1) 2 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air t10 sec. 2.) See figure3 for more detailed information Rev. 1.3 page 2 2010-02-10

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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