BSO613SPV G SIPMOS Power-Transistor Features Product Summary P-Channel Drain source voltage V -60 V DS Enhancement mode Drain-source on-state resistance R 0.13 W DS(on) Avalanche rated Continuous drain current I -3.44 A D dv/dt rated 18 S D 27 S D Qualified according to AEC Q101 36 S D 45 Halogenfree according to IEC61249221 G D Top View SIS00062 Type Package Lead free BSO613SPV G PG-SO 8 Yes Maximum Ratings,at T = 25 C, unless otherwise specified j Parameter Symbol Value Unit Continuous drain current I -3.44 A D T = 25 C A Pulsed drain current I -13.8 D puls T = 25 C A Avalanche energy, single pulse E 150 mJ AS I = -3.44 A , V = -25 V, R = 25 W D DD GS Avalanche energy, periodic limited by T E 0.25 jmax AR Reverse diode dv/dt dv/dt 6 kV/s I = -3.44 A, V = -48 V, di/dt = 200 A/s, S DS T = 150 C jmax Gate source voltage V 20 V GS Power dissipation P 2.5 W tot T = 25 C A Operating and storage temperature T , T -55... +150 C j stg IEC climatic category DIN IEC 68-1 55/150/56 Rev.2.0 Page 1 20190730 BSO613SPV G Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - soldering point R - - 25 K/W thJS (Pin 4) SMD version, device on PCB: R thJA min. footprint t 10 sec. - - 100 2 1) 6 cm cooling area t 10 sec. - - 50 Electrical Characteristics, at T = 25 C, unless otherwise specified j Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain- source breakdown voltage V -60 - - V (BR)DSS V = 0 V, I = -250 A GS D Gate threshold voltage, V = V V -2.1 -3 -4 GS DS GS(th) I = 1 mA D Zero gate voltage drain current I A DSS V = -60 V, V = 0 V, T = 25 C - -0.1 -1 DS GS j V = -60 V, V = 0 V, T = 125 C - -10 -100 DS GS j Gate-source leakage current I - -10 -100 nA GSS V = -20 V, V = 0 V GS DS Drain-source on-state resistance R - 0.11 0.13 W DS(on) V = -10 V, I = -3.44 A GS D 1 2 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Rev.2.0 Page 2 2019-07-30