Rev. 2.2 BSO 615 C G SIPMOS Small-Signal-Transistor Features Product Summary N P Drain source voltage V 60 -60 V Dual N- and P -Channel DS Enhancement mode Drain-Source on-state R 0.11 0.3 W DS(on) resistance Logic Level Continuous drain current I 3.1 -2 A Avalanche rated D Pb-free lead plating RoHS compliant Type Package Marking BSO 615 C PG-DSO-8 615C Maximum Ratings,at T = 25 C, unless otherwise specified j Parameter Symbol Value Unit N P Continuous drain current I A D T = 25 C 3.1 -2 A T = 70 C 2.5 -1.6 A Pulsed drain current I 12.4 -8 D puls T = 25 C A Avalanche energy, single pulse E mJ AS I = 3.1 A , V = 25 V, R = 25 W 47 - D DD GS I = -2 A , V = -25 V, R = 25 W - 70 D DD GS Avalanche energy, periodic limited by T E 0.2 0.2 jmax AR Reverse diode dv/dt, T = 150 C dv/dt kV/s jmax I = 3.1 A, V = 48 V, di/dt = 200 A/s 6 - S DS I = -2 A, V = -48 V, di/dt = -200 A/s - 6 S DS Gate source voltage V 20 20 V GS Power dissipation P 2 2 W tot T = 25 C A Operating and storage temperature T , T -55...+150 C j stg IEC climatic category DIN IEC 68-1 55/150/56 2019-07-30 Page 1Rev. 2.2 BSO 615 C G Termal Characteristics Parameter Symbol Values Unit min. typ. max. Dynamic Characteristics Thermal resistance, junction - soldering point N R - - 40 K/W thJS ( Pin 4) P - - 40 SMD version, device on PCB: R thJA min. footprint t 10 sec. N - - 100 2 1) 6 cm cooling area t 10 sec. N - - 62.5 min. footprint t 10 sec. P - - 110 2 1) 6 cm cooling area t 10 sec. P - - 62.5 Static Characteristics, at T = 25 C, unless otherwise specified j Drain- source breakdown voltage V V (BR)DSS V = 0 V, I = 250 A N 60 - - GS D V = 0 V, I = -250 A P -60 - - GS D Gate threshold voltage, V = V V GS DS GS(th) I = 20 A N 1.2 1.6 2.0 D I = -450 A P -1 -1.5 -2.0 D Zero gate voltage drain current I A DSS V = 60 V, V = 0 V, T = 25 C N - 0.1 1 DS GS j V = 60 V, V = 0 V, T = 125 C N - 10 100 DS GS j V = -60 V, V = 0 V, T = 25 C P - -0.1 -1 DS GS j V = -60 V, V = 0 V, T = 125 C P - -10 -100 DS GS j Gate-source leakage current I nA GSS V = 20 V, V = 0 V N - 10 100 GS DS V = -20 V, V = 0 V P - -10 -100 GS DS Drain-source on-state resistance R W DS(on) N - 0.1 0.15 V = 4.5 V, I = 2.7 A GS D V = -4.5 V, I = -1.7 A P - 0.27 0.45 GS D Drain-source on-state resistance R DS(on) V = 10 V, I = 3.1 A N - 0.07 0.11 GS D V = -10 V , I = -2 A P - 0.19 0.3 GS D 2 1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. 2019-07-30 Page 2