BSP129 SIPMOS Small-Signal-Transistor Product Summary Features V 240 V DS N-channel R 6 W DS(on),max Depletion mode I 0.05 A DSS,min dv /dt rated Available with V indicator on reel GS(th) Pb-free lead plating RoHS compliant PG-SOT223 Qualified according to AEC Q101 HalogenfreeaccordingtoIEC61249221 Type Package Tape and Reel Marking Packaging Type Package Tape and Reel Marking Packaging BSP129 PG-SOT223 H6327: 1000 pcs/reel BSP129 Non dry BSP129 PG-SOT223 L6327: 1000 pcs/reel BSP129 Non dry BSP129 PG-SOT223 H6906: 1000 pcs/reel BSP129 Non dry 1) sorted in V bands GS(th) BSP129 PG-SOT223 L6906: 1000 pcs/reel soed BSP129 Non dry Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25C Continuous drain current 0.35 A D A T =70C 0.28 A Pulsed drain current I T =25C 1.4 D,pulse A I =0.36A, D V =192V, DS Reverse diode dv /dt dv /dt 6 kV/s di /dt =200A/s, T =150C j,max V Gate source voltage 20 V GS 1A(>250V,<500V) ESD class (JESD22-A114-HBM) Power dissipation P T =25C 1.8 W tot A Operating and storage temperature T , T -55 ... 150 C j stg IEC climatic category DIN IEC 68-1 55/150/56 1) see table on next page and diagram 11 Rev. 1. 42 page 1 2012-11-29BSP129 Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics Thermal resistance, R - - 25 K/W thJS junction - soldering point (pin 4) R SMD version, device on PCB minimal footprint - - 115 thJA 2 1) - - 70 6 cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =-3V, I =250A Drain-source breakdown voltage 240 - - V (BR)DSS GS D Gate threshold voltage V V =3V, I =108A -2.1 -1.4 -1 GS(th) DS D V =240V, DS I Drain-source cutoff current - - 0.1 A D(off) V =-3V, T =25C GS j V =240V, DS - - 10 V =-3V, T =125C GS j Gate-source leakage current I V =20V, V =0V - - 10 nA GSS GS DS On-state drain current I V =0V, V =10V 50 - - mA DSS GS DS R V =0V, I =25mA Drain-source on-state resistance - 6.5 20 W DS(on) GS D V =10V, I =0.35A - 4.2 6.0 GS D V >2 I R , DS D DS(on)max g Transconductance 0.18 0.36 - S fs I =0.28A D 3) Threshold voltage V sorted in bands GS(th) V V =3V, I =108A J -1.2 - -1 V GS(th) DS D K -1.35 - -1.15 L -1.5 - -1.3 M -1.65 - -1.45 N -1.8 - -1.6 2) 2 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (single layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. 3) Each reel contains transistors out of one band whose identifying letter is printed on the reel label. A specific band cannot be ordered separately. Rev. 1. 42 page 2 2012-11-29