BSP135 SIPMOS Small-Signal-Transistor Product Summary Features V 600 V DS N-channel R 60 W DS(on),max Depletion mode I 0.02 A DSS,min dv /dt rated Available with V indicator on reel GS(th) Pb-free lead plating RoHS compliant PG-SOT223 Qualified according to AEC Q101 HalogenfreeaccordingtoIEC61249221 Type Package Tape and Reel Information Marking Packaging Type Package Tape and Reel Information Marking Packaging BSP135 PG-SOT223 H6327: 1000 pcs/reel BSP135 Non dry BSP135 PG-SOT223 L6327: 1000 pcs/reel BSP135 Non dry BSP135 PG-SOT223 H6906: 1000 pcs/reel BSP135 Non dry sorted in V bands1) BSP135 PG-SOT223 L6906: 1000 pcs/reel BSP135 Non dry GS(th) Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit Continuous drain current I T =25C 0.12 A D A T =70C 0.10 A I T =25C Pulsed drain current 0.48 D,pulse A I =0.12A, V =20V, D DS Reverse diode dv /dt dv /dt di /dt =200A/s, 6 kV/s T =150C j,max V Gate source voltage 20 V GS ESD Class 1A(>250V,<500V) (JESD22-A114-HBM) P T =25C Power dissipation 1.8 W tot A T , T Operating and storage temperature -55 ... 150 C j stg IEC climatic category DIN IEC 68-1 55/150/56 1) see table on next page and diagram 11 Rev. 1.3 3 page 1 2012-11-29BSP135 Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics Thermal resistance, R - - 25 K/W thJS junction - soldering point (pin 4) SMD version, device on PCB R minimal footprint - - 115 thJA 2 2) - - 70 6 cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics Drain-source breakdown voltage V V =-3V, I =250A 600 - - V (BR)DSS GS D V V =3V, I =94A Gate threshold voltage -2.1 -1.4 -1 GS(th) DS D V =600V, DS Drain-source cutoff current I - - 0.1 A D(off) V =-3V, T =25C GS j V =600V, DS - - 10 V =-3V, T =125C GS j I V =20V, V =0V Gate-source leakage current - - 100 nA GSS GS DS I V =0V, V =10V On-state drain current 20 - - mA DSS GS DS R V =0V, I =0.01A Drain-source on-state resistance - 30 60 W DS(on) GS D V =10V, I =0.12A - 25 45 GS D V >2 I R , DS D DS(on)max Transconductance g 0.08 0.16 - S fs I =0.1A D 3) Threshold voltage V sorted in bands GS(th) J V V =3V, I =94A -1.2 - -1 V GS(th) DS D K -1.35 - -1.15 L -1.5 - -1.3 M -1.65 - -1.45 N -1.8 - -1.6 2) 2 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (single layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. 3) Each reel contains transistors out of one band whose identifying letter is printed on the reel label. A specific band cannot be ordered separately. Rev. 1.33 page 2 2012-11-29