BSP295 Infineon

Application Note AN 2014-02 V2.0 Feb. 2014 I n t r o d u c t i o n t o I n f i n e o n s S i m u l a t i o n M o d e l s P o w e r M O S F E T s IFAT PMM F. Stueckler G. Noebauer K. BueyuektasApplication Note AN 2014-02 Simulation models for Infineon Power MOSFET V2.0 Feb. 2014 Edition 2013-09-16 Published by Infineon Technologies Austria AG 9500 Villach, Austria Infineon Technologies Austria AG 2011. All Rights Reserved. Attention please THE INFORMATION GIVEN IN THIS APPLICATION NOTE IS GIVEN AS A HINT FOR THE IMPLEMEN- TATION OF THE INFINEON TECHNOLOGIES COMPONENT ONLY AND SHALL NOT BE REGARDED AS ANY DESCRIPTION OR WARRANTY OF A CERTAIN FUNCTIONALITY, CONDITION OR QUALITY OF THE INFINEON TECHNOLOGIES COMPONENT. THE RECIPIENT OF THIS APPLICATION NOTE MUST VERIFY ANY FUNCTION DESCRIBED HEREIN IN THE REAL APPLICATION. INFINEON TECHNOLOGIES HEREBY DISCLAIMS ANY AND ALL WARRANTIES AND LIABILITIES OF ANY KIND (INCLUDING WITHOUT LIMITATION WARRANTIES OF NON-INFRINGEMENT OF INTELLECTUAL PROPERTY RIGHTS OF ANY THIRD PARTY) WITH RESPECT TO ANY AND ALL INFORMATION GIVEN IN THIS APPLICATION NOTE. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. AN 2014-02 Revision History: 14-02-07, V2.0 Previous Version: 05-04-20, V1.0 Subjects: Update on Infineon Power MOSFET and Infineon format style Authors: Franz Stueckler (IFAT PMM APS SE AC), Kevni Bueyuektas (IFAG PMM DPC HVM) and Gerhard Noebauer (IFAT PMM DPC LVM PD) We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: Franz.Stueckler infineon.com or Kevni.Bueyuektas infineon.com 2