X-On Electronics has gained recognition as a prominent supplier of BSP295H6327XTSA1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. BSP295H6327XTSA1 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

BSP295H6327XTSA1 Infineon

BSP295H6327XTSA1 electronic component of Infineon
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Part No.BSP295H6327XTSA1
Manufacturer: Infineon
Category: MOSFETs
Description: Transistor: N-MOSFET; unipolar; 60V; 1.8A; 1.8W; SOT223
Datasheet: BSP295H6327XTSA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.7866 ea
Line Total: USD 0.79 
Availability - 4987
Ship by Wed. 20 Nov to Fri. 22 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
180
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 0.6335
10 : USD 0.5642
25 : USD 0.5585
100 : USD 0.4156

2910
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 0.4114
1000 : USD 0.3836
2000 : USD 0.3545

12
Ship by Thu. 21 Nov to Tue. 26 Nov
MOQ : 1
Multiples : 1
1 : USD 0.7899
10 : USD 0.7708
30 : USD 0.7594
100 : USD 0.748

4987
Ship by Wed. 20 Nov to Fri. 22 Nov
MOQ : 1
Multiples : 1
1 : USD 0.7866
10 : USD 0.598
100 : USD 0.4865
500 : USD 0.4002
1000 : USD 0.3485
2000 : USD 0.3277
10000 : USD 0.3002

892
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ : 72
Multiples : 1
72 : USD 0.5687
100 : USD 0.5672
500 : USD 0.5542

12610
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ : 1000
Multiples : 1000
1000 : USD 0.4887

180
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ : 20
Multiples : 1
20 : USD 0.5642
25 : USD 0.5585
100 : USD 0.4156

2910
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ : 22
Multiples : 1
22 : USD 0.3545

   
Manufacturer
Product Category
Technology
Polarisation
Case
Mounting
Type Of Transistor
Drain-Source Voltage
Gate-Source Voltage
Drain Current
On-State Resistance
Power Dissipation
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We are delighted to provide the BSP295H6327XTSA1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BSP295H6327XTSA1 and other electronic components in the MOSFETs category and beyond.

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Rev 2.3 BSP295 SIPMOS Small-Signal-Transistor Product Summary Feature V 60 V DS N-Channel R 0.3 DS(on) Enhancement mode I 1.8 A D dv/dt rated PG-SOT223 Pb-free lead plating RoHS compliant x Qualified according to AEC Q101 4 HalogenfreeaccordingtoIEC61249221 3 2 1 VPS05163 MarkingMarking Packaging Type Package Tape and Reel Information PG-SOT223 BSP295 Non dry BSP295 H6327: 1000 pcs/reel Maximum Ratings, at T = 25 C, unless otherwise specified j Parameter Symbol Value Unit A Continuous drain current I D T =25C 1.8 A T =70C 1.44 A 7.2 Pulsed drain current I D puls T =25C A Reverse diode dv/dt dv/dt 6 kV/s I =1.8A, V =40V, di/dt=200A/s, T =150C DS jmax S Gate source voltage V V 20 GS ESD class (JESD22-A114-HBM) 1B (>500V, <1000V) Power dissipation P 1.8 W tot T =25C A C Operating and storage temperature T , T -55... +150 j stg IEC climatic category DIN IEC 68-1 55/150/56 Page 1 2012-11-28Rev 2.3 BSP295 Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics - 15 25 K/W Thermal resistance, junction - soldering point R thJS SMD version, device on PCB: R thJA min. footprint - 80 115 2 1) 6 cm cooling area - 48 70 Electrical Characteristics, at T = 25 C, unless otherwise specified j Parameter Symbol Values Unit min. typ. max. Static Characteristics V 60 - - V Drain-source breakdown voltage (BR)DSS V =0, I =250A GS D 0.8 1.1 1.8 Gate threshold voltage, V = V V GS DS GS(th) I =400A D A Zero gate voltage drain current I DSS V =60V, V =0, T =25C - - 0.1 DS GS j V =60V, V =0, T =150C - 8 50 DS GS j - 1 10 nA Gate-source leakage current I GSS V =20V, V =0 GS DS Drain-source on-state resistance R DS(on) V =10V, I =1.8A - 0.22 0.3 GS D V =4.5V, I =1.8A - 0.39 0.5 GS D 1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2012-11-28

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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