Rev 2.3 BSP295 SIPMOS Small-Signal-Transistor Product Summary Feature V 60 V DS N-Channel R 0.3 DS(on) Enhancement mode I 1.8 A D dv/dt rated PG-SOT223 Pb-free lead plating RoHS compliant x Qualified according to AEC Q101 4 HalogenfreeaccordingtoIEC61249221 3 2 1 VPS05163 MarkingMarking Packaging Type Package Tape and Reel Information PG-SOT223 BSP295 Non dry BSP295 H6327: 1000 pcs/reel Maximum Ratings, at T = 25 C, unless otherwise specified j Parameter Symbol Value Unit A Continuous drain current I D T =25C 1.8 A T =70C 1.44 A 7.2 Pulsed drain current I D puls T =25C A Reverse diode dv/dt dv/dt 6 kV/s I =1.8A, V =40V, di/dt=200A/s, T =150C DS jmax S Gate source voltage V V 20 GS ESD class (JESD22-A114-HBM) 1B (>500V, <1000V) Power dissipation P 1.8 W tot T =25C A C Operating and storage temperature T , T -55... +150 j stg IEC climatic category DIN IEC 68-1 55/150/56 Page 1 2012-11-28Rev 2.3 BSP295 Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics - 15 25 K/W Thermal resistance, junction - soldering point R thJS SMD version, device on PCB: R thJA min. footprint - 80 115 2 1) 6 cm cooling area - 48 70 Electrical Characteristics, at T = 25 C, unless otherwise specified j Parameter Symbol Values Unit min. typ. max. Static Characteristics V 60 - - V Drain-source breakdown voltage (BR)DSS V =0, I =250A GS D 0.8 1.1 1.8 Gate threshold voltage, V = V V GS DS GS(th) I =400A D A Zero gate voltage drain current I DSS V =60V, V =0, T =25C - - 0.1 DS GS j V =60V, V =0, T =150C - 8 50 DS GS j - 1 10 nA Gate-source leakage current I GSS V =20V, V =0 GS DS Drain-source on-state resistance R DS(on) V =10V, I =1.8A - 0.22 0.3 GS D V =4.5V, I =1.8A - 0.39 0.5 GS D 1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2012-11-28