X-On Electronics has gained recognition as a prominent supplier of BSP299 H6327 MOSFETs across the USA, India, Europe, Australia, and various other global locations. BSP299 H6327 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

BSP299 H6327 Infineon

BSP299 H6327 electronic component of Infineon
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See Product Specifications
Part No.BSP299 H6327
Manufacturer: Infineon
Category: MOSFETs
Description: Infineon Technologies MOSFET N-Ch 500V 400mA SOT-223-3
Datasheet: BSP299 H6327 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 28
Multiples : 1
28 : USD 0.6
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 3.4635
10 : USD 1.2248
100 : USD 0.908
500 : USD 0.8021
1000 : USD 0.6333
N/A

Obsolete
0
MOQ : 61
Multiples : 61
61 : USD 1.2393
N/A

Obsolete
0
MOQ : 63
Multiples : 62
63 : USD 1.3636
N/A

Obsolete
   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Package Case
Series
Brand
Forward Transconductance Min
Fall Time
Id Continuous Drain Current
Pd Power Dissipation
Qg Gate Charge
Rds On Drain Source Resistance
Rise Time
Typical Turn Off Delay Time
Typical Turn On Delay Time
Vds Drain Source Breakdown Voltage
Vgs Gate Source Breakdown Voltage
Vgs Th Gate Source Threshold Voltage
Rohs Mouser
Height
Length
Transistor Type
Width
Forward Transconductance - Min
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the BSP299 H6327 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BSP299 H6327 and other electronic components in the MOSFETs category and beyond.

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BSP299 SIPMOS Small-Signal Transistor N channel Enhancement mode Avalanche rated V = 2.1 ... 4.0 V GS(th) Pb-free lead plating RoHS compliant Qualified according to AEC Q101 Pin 1 Pin 2 Pin 3 Pin 4 HalogenfreeaccordingtoIEC61249221 G D S D Type Package Marking V I R DS D DS(on) BSP 299 500 V 0.4 A 4 SOT-223 BSP299 Type Pb-free Tape and Reel Information Packaging BSP 299 Yes H6327:1000pcs/reel Dry Maximum Ratings Parameter Symbol Values Unit Continuous drain current I A D T = 25 C 0.4 A DC drain current, pulsed I Dpuls T = 25 C 1.6 A Avalanche energy, single pulse E mJ AS I = 1.2 A, R = 25 D GS T = 25 C 130 j Gate source voltage V 20 V GS Power dissipation P W tot T = 25 C 1.8 A ESD Class Class 1b JESD22-A114-HBM Rev 2.4 1 2012-1129BSP299 Maximum Ratings Parameter Symbol Values Unit Chip or operating temperature T -55 ... + 150 C j Storage temperature T -55 ... + 150 stg 1) Thermal resistance, chip to ambient air R 70 K/W thJA Therminal resistance, junction-soldering point R 25 thJS DIN humidity category, DIN 40 040 E IEC climatic category, DIN IEC 68-1 55 / 150 / 56 2 1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm copper area for drain connection Electrical Characteristics, at T = 25C, unless otherwise specified j Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain- source breakdown voltage V V (BR)DSS V = 0 V, I = 0.25 mA, T = 0 C 500 - - GS D j Gate threshold voltage V GS(th) V =V I = 1 mA 2.1 3 4 GS DS, D Zero gate voltage drain current I A DSS V = 500 V, V = 0 V, T = 25 C - 0.1 1 DS GS j V = 500 V, V = 0 V, T = 125 C - 10 100 DS GS j Gate-source leakage current I nA GSS V = 20 V, V = 0 V - 10 100 GS DS Drain-Source on-state resistance R DS(on) V = 10 V, I = 0.4 A - 3.1 4 GS D Rev 2.4 2 2012-11-29

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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