X-On Electronics has gained recognition as a prominent supplier of BSP300H6327XUSA1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. BSP300H6327XUSA1 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

BSP300H6327XUSA1 Infineon

BSP300H6327XUSA1 electronic component of Infineon
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See Product Specifications
Part No.BSP300H6327XUSA1
Manufacturer: Infineon
Category: MOSFETs
Description: Transistor: N-MOSFET; unipolar; 800V; 0.19A; 1.8W; SOT223
Datasheet: BSP300H6327XUSA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1000
Multiples : 1000
1000 : USD 0.4536
2000 : USD 0.4536
3000 : USD 0.4536
5000 : USD 0.4536
10000 : USD 0.4536
N/A

Obsolete
0

Multiples : 1000
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 3.078
10 : USD 1.1025
100 : USD 0.8133
500 : USD 0.7193
1000 : USD 0.567
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 0.8971
25 : USD 0.6944
30 : USD 0.4825
81 : USD 0.4566
1000 : USD 0.451
N/A

Obsolete
0
MOQ : 1000
Multiples : 1000
1000 : USD 0.6648
N/A

Obsolete
0
MOQ : 1000
Multiples : 1000
1000 : USD 0.5004
N/A

Obsolete
   
Manufacturer
Product Category
Technology
Polarisation
Case
Mounting
Type Of Transistor
Drain-Source Voltage
Gate-Source Voltage
Drain Current
On-State Resistance
Power Dissipation
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BSP300H6327XUSA1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BSP300H6327XUSA1 and other electronic components in the MOSFETs category and beyond.

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BSP300 SIPMOS Small-Signal Transistor N channel Enhancement mode Avalanche rated V = 2.0... 4.0 V GS(th) Pb-free lead plating RoHS compliant Qualified according to AEC Q101 Pin 1 Pin 2 Pin 3 Pin 4 HalogenfreeaccordingtoIEC61249221 G D S D Type V I R Package Marking DS D DS(on) BSP300 800 V 0.19 A 20 PG-SOT223 BSP300 Type RoHS compliant Tape and Reel Information Packaging BSP300 YesH6327 Dry Maximum Ratings Parameter Symbol Values Unit Continuous drain current I A D T = 25 C 0.19 A DC drain current, pulsed I Dpuls T = 25 C 0.76 A Avalanche energy, single pulse E mJ AS I = 0.8 A, V = 50 V, R = 25 D DD GS L = 105 mH, T = 25 C 36 j Gate source voltage V 20 V GS Power dissipation P W tot T = 25 C 1.8 A ESD Class Class 1a JESD22-A114-HBM Rev 2.2 Page 1 2012-11-29BSP300 Maximum Ratings Parameter Symbol Values Unit Chip or operating temperature T -55 ... + 150 C j Storage temperature T -55 ... + 150 stg 1) Thermal resistance, chip to ambient air R 70 K/W thJA 1) Thermal resistance, junction-soldering point R 14 thJS DIN humidity category, DIN 40 040 E IEC climatic category, DIN IEC 68-1 55 / 150 / 56 2 1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm copper area for drain connection Electrical Characteristics, at T = 25C, unless otherwise specified j Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain- source breakdown voltage V V (BR)DSS V = 0 V, I = 0.25 mA, T = 25 C 800 - - GS D j Gate threshold voltage V GS(th) V =V I = 1 mA 2 3 4 GS DS, D Zero gate voltage drain current I A DSS V = 800 V, V = 0 V, T = 25 C - 0.1 1 DS GS j V = 800 V, V = 0 V, T = 125 C - 10 100 DS GS j Gate-source leakage current I nA GSS V = 20 V, V = 0 V - 10 100 GS DS Drain-Source on-state resistance R DS(on) V = 10 V, I = 0.19 A - 15 20 GS D Rev 2.2 Page 2 2012-11-29

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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