X-On Electronics has gained recognition as a prominent supplier of BSP315PH6327XTSA1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. BSP315PH6327XTSA1 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

BSP315PH6327XTSA1 Infineon

BSP315PH6327XTSA1 electronic component of Infineon
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Part No.BSP315PH6327XTSA1
Manufacturer: Infineon
Category: MOSFETs
Description: Transistor: P-MOSFET; unipolar; -60V; -1.17A; 1.8W; PG-SOT223
Datasheet: BSP315PH6327XTSA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.8556 ea
Line Total: USD 0.86 
Availability - 13417
Ship by Wed. 20 Nov to Fri. 22 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
789
Ship by Thu. 21 Nov to Tue. 26 Nov
MOQ : 1
Multiples : 1
1 : USD 0.8702
10 : USD 0.687
30 : USD 0.5936
100 : USD 0.5039
500 : USD 0.4485
1000 : USD 0.4217

13417
Ship by Wed. 20 Nov to Fri. 22 Nov
MOQ : 1
Multiples : 1
1 : USD 0.8556
10 : USD 0.621
100 : USD 0.4462
500 : USD 0.3669
1000 : USD 0.3438
2000 : USD 0.3162
5000 : USD 0.3024

1692
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 0.966
10 : USD 0.8148
49 : USD 0.3598
134 : USD 0.3402
10000 : USD 0.3276

3897
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ : 43
Multiples : 1
43 : USD 0.9538
50 : USD 0.8385
100 : USD 0.6582
200 : USD 0.6289
500 : USD 0.533
2000 : USD 0.5314
4000 : USD 0.5297

   
Manufacturer
Product Category
Technology
Case
Mounting
Polarisation
Type Of Transistor
Drain-Source Voltage
Drain Current
On-State Resistance
Gate-Source Voltage
Power Dissipation
Brand Category
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We are delighted to provide the BSP315PH6327XTSA1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BSP315PH6327XTSA1 and other electronic components in the MOSFETs category and beyond.

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BSP315P SIPMOS Small-Signal-Transistor Features Product Summary P-Channel Drain source voltage V -60 V DS Enhancement mode Drain-Source on-state resistance R 0.8 DS(on) Avalanche rated Continuous drain current I -1.17 A D Logic Level 4 dv/dt rated Pin 1 Pin2/4 PIN 3 3 G D S Qualified according to AEC Q101 2 1 VPS05163 HalogenfreeaccordingtoIEC61249221 Type Package Tape and Reel Information Marking Packaging PG-SOT223 BSP315P H6327: 1000 pcs/reel BSP315P Non dry Maximum Ratings,at T = 25 C, unless otherwise specified j Parameter Symbol Value Unit Continuous drain current I A D T = 25 C -1.17 A T = 70 C -0.94 A Pulsed drain current I -4.68 D puls T = 25 C A Avalanche energy, single pulse E 24 mJ AS I = -1.17 A , V = -25 V, R = 25 D DD GS Avalanche energy, periodic limited by T E 0.18 jmax AR Reverse diode dv/dt dv/dt 6 kV/s I = -1.17 A, V = -48 V, di/dt = 200 A/s, S DS T = 150 C jmax Gate source voltage V V 20 GS Power dissipation P 1.8 W tot T = 25 C A Operating and storage temperature T , T -55...+150 C j stg IEC climatic category DIN IEC 68-1 55/150/56 ESD Class JESD22-A114-HBM Class 0 Rev.1.7 Page 1 2012-11-26 BSP315P Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - soldering point R - - 25 K/W thJS (Pin 4) SMD version, device on PCB: R K/W thJA min. footprint - - 115 2 1) 6 cm cooling area - - 70 Electrical Characteristics, at T = 25 C, unless otherwise specified j Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain- source breakdown voltage V -60 - - V (BR)DSS V = 0 V, I = -250 A GS D Gate threshold voltage, V = V V -1 -1.5 -2 GS DS GS(th) I = -160 A D Zero gate voltage drain current I A DSS V = -60 V, V = 0 V, T = 25 C - -0.1 -1 DS GS j V = -60 V, V = 0 V, T = 125 C - -10 -100 DS GS j Gate-source leakage current I - -10 -100 nA GSS V = -20 V, V = 0 V GS DS Drain-Source on-state resistance R - 0.8 1.4 DS(on) V = -4.5 V, I = -0.89 A GS D Drain-Source on-state resistance R - 0.5 0.8 DS(on) V = -10 V, I = -1.17 A GS D 1 2 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Rev.1.7 Page 2 2012-11-26

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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