BSP316P SIPMOS Small-Signal-Transistor Product Summary Feature V -100 V DS P-Channel R 1.8 DS(on) Enhancement mode I -0.68 A D Logic Level PG-SOT223-4-1 dv/dt rated Drain pin 2/4 Gate Qualified according to AEC Q101 pin1 HalogenfreeaccordingtoIE C61249221 Source pin 3 Type Package Tape and Reel Information Marking Packaging PG-SOT223-4-1 BSP316P Non dry BSP316P H6327: 1000 pcs/reel Maximum Ratings, at T = 25 C, unless otherwise specified j Parameter Symbol Value Unit A Continuous drain current I D T =25C -0.68 A T =70C -0.54 A -2.72 Pulsed drain current I D puls T =25C A 6 kV/s Reverse diode dv/dt dv/dt I =-0.68A, V =-48V, di/dt=-200A/s, T =150C S DS jmax V Gate source voltage V 20 GS 1.8 W Power dissipation P tot T =25C A T , T C Operating and storage temperature -55... +150 j stg 55/150/56 IEC climatic category DIN IEC 68-1 ESD Class Class 1a JESD22-A114-HBM Rev. 2.0 Page 1 201 6- 05- 30 BSP316P Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics - 15 25 K/W Thermal resistance, junction - soldering point R thJS (Pin 4) SMD version, device on PCB: R thJA min. footprint - 80 115 2 1) 6 cm cooling area - 48 70 Electrical Characteristics, at T = 25 C, unless otherwise specified j Parameter Symbol Values Unit min. typ. max. Static Characteristics -100 - - V Drain-source breakdown voltage V (BR)DSS V =0, I =-250A GS D -1 -1.5 -2 Gate threshold voltage, V = V V GS DS GS(th) I =-170A D A Zero gate voltage drain current I DSS V =-100V, V =0, T =25C - -0.1 -0.2 DS GS j V =-100V, V =0, T =150C - -10 -100 DS GS j - -10 -100 nA Gate-source leakage current I GSS V =-20V, V =0 GS DS - 1.5 2.3 Drain-source on-state resistance R DS(on) V =-4.5V, I =-0.61A GS D - 1.4 1.8 Drain-source on-state resistance R DS(on) V =-10V, I =-0.68A GS D 1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Rev.2.0 Page 2 201 6- 05- 30