BSP 317 P SIPMOS Small-Signal-Transistor Product Summary Feature V -250 V DS P-Channel R 4 DS(on) Enhancement mode I -0.43 A D Logic Level PG-SOT-223 dv/dt rated Drain 4 pin 2/4 Gate pin1 3 Source 2 pin 3 1 VPS05163 Type Package Tape and Reel Information Marking P-SOT-223 BSP 317 P E6327 BSP317P PG-SOT-223 BSP 317 P L6327 BSP317P Maximum Ratings, at T = 25 C, unless otherwise specified j Parameter Symbol Value Unit A Continuous drain current I D T =25C -0.43 A T =70C -0.34 A -1.72 Pulsed drain current I D puls T =25C A 6 kV/s Reverse diode dv/dt dv/dt I =-0.43A, V =-200V, di/dt=-200A/s, T =150C S DS jmax V Gate source voltage V 20 GS 1.8 W Power dissipation P tot T =25C A C Operating and storage temperature T , T -55... +150 j stg 55/150/56 IEC climatic category DIN IEC 68-1 Rev.1.3 Page 1 2005-11-23 BSP 317 P Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics - 15 25 K/W Thermal resistance, junction - soldering point R thJS (Pin 4) SMD version, device on PCB: R thJA min. footprint - 80 115 2 1) 6 cm cooling area - 48 70 Electrical Characteristics, at T = 25 C, unless otherwise specified j Parameter Symbol Values Unit min. typ. max. Static Characteristics -250 - - V Drain-source breakdown voltage V (BR)DSS V =0, I =-250A GS D -1 -1.5 -2 Gate threshold voltage, V = V V GS DS GS(th) I =-370A D A Zero gate voltage drain current I DSS V =-250V, V =0, T =25C - -0.1 -0.2 DS GS j V =-250V, V =0, T =150C - -10 -100 DS GS j - -10 -100 nA Gate-source leakage current I GSS V =-20V, V =0 GS DS - 3.3 5 Drain-source on-state resistance R DS(on) V =-4.5V, I =-0.39A GS D - 3 4 Drain-source on-state resistance R DS(on) V =-10V, I =-0.43A GS D 1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Rev.1.3 Page 2 2005-11-23
