X-On Electronics has gained recognition as a prominent supplier of BSP317PL6327 MOSFETs across the USA, India, Europe, Australia, and various other global locations. BSP317PL6327 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

BSP317PL6327 Infineon

BSP317PL6327 electronic component of Infineon
BSP317PL6327 Infineon
BSP317PL6327 MOSFETs
BSP317PL6327  Semiconductors

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See Product Specifications
Part No. BSP317PL6327
Manufacturer: Infineon
Category: MOSFETs
Description: MOSFET P-Ch -250V 430mA SOT-223-3
Datasheet: BSP317PL6327 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
962: USD 0.334 ea
Line Total: USD 321.31 
Availability - 0
MOQ: 962  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Tue. 07 Jan to Mon. 13 Jan
MOQ : 1
Multiples : 1
1 : USD 0.8223
10 : USD 0.5962
100 : USD 0.4746
500 : USD 0.403
1000 : USD 0.3605
5000 : USD 0.3307

0
Ship by Tue. 07 Jan to Mon. 13 Jan
MOQ : 962
Multiples : 1
962 : USD 0.334

   
Manufacturer
Product Category
Transistor Polarity
Brand
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No. Of Pins
Operating Temperature Max
Msl
Svhc
Current Id Max
Current Temperature
External Depth
External Length / Height
External Width
Full Power Rating Temperature
Junction Temperature Tj Max
No. Of Transistors
Operating Temperature Min
Operating Temperature Range
Power Dissipation Ptot Max
Pulse Current Idm
Smd Marking
Tape Width
Termination Type
Voltage Vds Typ
Voltage Vgs Max
Voltage Vgs Rds On Measurement
Voltage Vgs Th Max
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BSP317PL6327 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BSP317PL6327 and other electronic components in the MOSFETs category and beyond.

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BSP 317 P SIPMOS Small-Signal-Transistor Product Summary Feature V -250 V DS P-Channel R 4 DS(on) Enhancement mode I -0.43 A D Logic Level PG-SOT-223 dv/dt rated Drain 4 pin 2/4 Gate pin1 3 Source 2 pin 3 1 VPS05163 Type Package Tape and Reel Information Marking P-SOT-223 BSP 317 P E6327 BSP317P PG-SOT-223 BSP 317 P L6327 BSP317P Maximum Ratings, at T = 25 C, unless otherwise specified j Parameter Symbol Value Unit A Continuous drain current I D T =25C -0.43 A T =70C -0.34 A -1.72 Pulsed drain current I D puls T =25C A 6 kV/s Reverse diode dv/dt dv/dt I =-0.43A, V =-200V, di/dt=-200A/s, T =150C S DS jmax V Gate source voltage V 20 GS 1.8 W Power dissipation P tot T =25C A C Operating and storage temperature T , T -55... +150 j stg 55/150/56 IEC climatic category DIN IEC 68-1 Rev.1.3 Page 1 2005-11-23 BSP 317 P Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics - 15 25 K/W Thermal resistance, junction - soldering point R thJS (Pin 4) SMD version, device on PCB: R thJA min. footprint - 80 115 2 1) 6 cm cooling area - 48 70 Electrical Characteristics, at T = 25 C, unless otherwise specified j Parameter Symbol Values Unit min. typ. max. Static Characteristics -250 - - V Drain-source breakdown voltage V (BR)DSS V =0, I =-250A GS D -1 -1.5 -2 Gate threshold voltage, V = V V GS DS GS(th) I =-370A D A Zero gate voltage drain current I DSS V =-250V, V =0, T =25C - -0.1 -0.2 DS GS j V =-250V, V =0, T =150C - -10 -100 DS GS j - -10 -100 nA Gate-source leakage current I GSS V =-20V, V =0 GS DS - 3.3 5 Drain-source on-state resistance R DS(on) V =-4.5V, I =-0.39A GS D - 3 4 Drain-source on-state resistance R DS(on) V =-10V, I =-0.43A GS D 1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Rev.1.3 Page 2 2005-11-23

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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