BSP321P SIPMOS Small-Signal-Transistor Product Summary Features V -100 V DS P-Channel R 900 mW DS(on),max Enhancement mode I -0.98 A D Normal level Avalanche rated PG-SOT-223 Pb-free lead plating RoHS compliant Qualified according to AEC Q101 Halogen-free according to IEC61249-2-21 Type Package Tape and Reel Information Marking Lead free Packing BSP321P PG-SOT-223 H6327: 1000 pcs/reel BSP321P Yes Non dry Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit Continuous drain current I T =25C -0.98 A D C T =70C -0.79 C I T =25C -3.9 Pulsed drain current D,pulse C E 57 Avalanche energy, single pulse I =-0.98A, R =25W mJ AS D GS Gate source voltage V 20 V GS P T =25C 1.8 Power dissipation W tot C T , T -55 ... 150 Operating and storage temperature C j stg ESD Class JESD22-A114-HBM 1A (250V to 500V) Soldering temperature 260 C 55/150/56 IEC climatic category DIN IEC 68-1 Rev 1.05 page 1 2012-11-27BSP321P Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics Thermal resistance, minimal footprint, R - - 115 thJA junction - ambient steady state 2 1) 6 cm cooling area , - - 70 steady state Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics Drain-source breakdown voltage V V =0V, I =-250A -100 - - V (BR)DSS GS D Gate threshold voltage V V =V ,I =-380A -2.1 -3.0 -4 GS(th) DS GS D V =-100V, V =0V, DS GS I Zero gate voltage drain current - -0.1 -1 A DSS T =25C j V =-100V, V =0V, DS GS - -10 -100 T =150C j I V =-20V, V =0V Gate-source leakage current - -10 -100 nA GSS GS DS V =-10V, I =- GS D R Drain-source on-state resistance - 689 900 mW DS(on) 0.98A V >2 I R , DS D DS(on)max g Transconductance 0.6 1.2 - S fs I =-0.79A D 1) 2 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. Rev 1.05 page 2 2012-11-27