Rev. 2.2 BSP324 SIPMOS Power-Transistor Product Summary Feature V 400 V N-Channel DS R 25 Enhancement mode DS(on) I 0.17 A Logic Level D SOT-223 dv/dt rated Pb-free lead plating RoHS compliant x Qualified according to AEC Q101 HalogenfreeaccordingtoIEC61249221 Type Package Pb-free Packaging Tape and Reel Information Marking PG-SOT223 Yes Non dry H6327: 1000 pcs/reel BSP324 BSP324 Maximum Ratings, at T = 25 C, unless otherwise specified j Parameter Symbol Value Unit A Continuous drain current I D T =25C 0.17 A T =70C 0.14 A 0.68 Pulsed drain current I D puls T =25C A 6 kV/s Reverse diode dv/dt dv/dt I =0.17A, V =320V, di/dt=200A/s, T =175C S DS jmax V Gate source voltage V 20 GS ESD Class (JESD22-A114-HBM) 1A (>250V, <500V) 1.8 W Power dissipation P tot T =25C A C Operating and storage temperature T , T -55... +150 j stg IEC climatic category DIN IEC 68-1 55/150/56 Page 1 20 12- 11- 29Rev. 2.2 BSP324 Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics - 16 25 K/W Thermal resistance, junction - soldering point R thJS (Pin 4) SMD version, device on PCB: R thJA min. footprint - 85 115 2 1) 6 cm cooling area - 45 70 Electrical Characteristics, at T = 25 C, unless otherwise specified j Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain-source breakdown voltage V 400 - - V (BR)DSS V =0, I =250A GS D 1.3 1.9 2.3 Gate threshold voltage, V = V V GS DS GS(th) I =94A D A Zero gate voltage drain current I DSS V =400V, V =0, T =25C - 0.01 0.1 DS GS j V =400V, V =0, T =125C - - 10 DS GS j - 10 100 nA Gate-source leakage current I GSS V =20V, V =0 GS DS Drain-source on-state resistance R - 14.3 22 DS(on) V =4.5V, I =0.05A GS D - 13.6 25 Drain-source on-state resistance R DS(on) V =10V, I =0.17A GS D 1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (single layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Page 2 20 12- 11- 29