BSP 372 SIPMOS Small-Signal Transistor N channel Enhancement mode Logic Level Avalanche rated V = 0.8 ...2.0 V GS(th) Pb-free lead plating RoHS compliant Pin 1 Pin 2 Pin 3 Pin 4 G D S D Type V I R DS D DS(on) BSP 372 100 V 1.7 A 0.31 Type Package Tape and Reel Information P-SOT-223 BSP 372 E6327 BSP 372 PG-SOT-223 L6327 Maximum Ratings Parameter Symbol Values Unit Continuous drain current I A D T = 28 C 1.7 A DC drain current, pulsed I Dpuls T = 25 C 6.8 A Avalanche energy, single pulse E mJ AS I = 1.7 A, V = 25 V, R = 25 D DD GS L = 23.3 mH, T = 25 C 45 j Gate source voltage V 14 V GS Gate-source peak voltage,aperiodic V 20 gs Power dissipation P W tot T = 25 C 1.8 A Rev 1.1 1 2005-11-23BSP 372 Maximum Ratings Parameter Symbol Values Unit Chip or operating temperature T -55 ... + 150 C j Storage temperature T -55 ... + 150 stg 1) Thermal resistance, chip to ambient air R 70 K/W thJA 1) Thermal resistance, junction-soldering point R 10 thJS IEC climatic category, DIN IEC 68-1 55 / 150 / 56 2 1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm copper area for drain connection Electrical Characteristics, at T = 25C, unless otherwise specified j Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain- source breakdown voltage V V (BR)DSS V = 0 V, I = 0.25 mA, T = 0 C 100 - - GS D j Gate threshold voltage V GS(th) V =V I = 1 mA 0.8 1.4 2 GS DS, D Zero gate voltage drain current I A DSS V = 100 V, V = 0 V, T = 25 C - 0.1 1 DS GS j V = 100 V, V = 0 V, T = 125 C - 10 100 DS GS j Gate-source leakage current I nA GSS V = 20 V, V = 0 V - 10 100 GS DS Drain-Source on-state resistance R DS(on) V = 5 V, I = 1.7 A - 0.24 0.31 GS D Rev 1.1 2 2005-11-23