X-On Electronics has gained recognition as a prominent supplier of BSP372N H6327 MOSFETs across the USA, India, Europe, Australia, and various other global locations. BSP372N H6327 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

BSP372N H6327 Infineon

BSP372N H6327 electronic component of Infineon
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See Product Specifications
Part No.BSP372N H6327
Manufacturer: Infineon
Category: MOSFETs
Description: Infineon Technologies MOSFET SMALL SIGNAL N-CH
Datasheet: BSP372N H6327 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.0005 ea
Line Total: USD 1 
Availability - 1526
Ship by Wed. 20 Nov to Fri. 22 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1526
Ship by Wed. 20 Nov to Fri. 22 Nov
MOQ : 1
Multiples : 1
1 : USD 1.0005
10 : USD 0.8786
100 : USD 0.5992
500 : USD 0.5002
1000 : USD 0.4255
2000 : USD 0.3853
5000 : USD 0.3772

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Package Case
Series
Transistor Type
Brand
Forward Transconductance Min
Fall Time
Id Continuous Drain Current
Pd Power Dissipation
Qg Gate Charge
Rds On Drain Source Resistance
Rise Time
Typical Turn Off Delay Time
Typical Turn On Delay Time
Vds Drain Source Breakdown Voltage
Vgs Gate Source Voltage
Vgs Th Gate Source Threshold Voltage
Rohs Mouser
Height
Length
Width
Forward Transconductance - Min
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the BSP372N H6327 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BSP372N H6327 and other electronic components in the MOSFETs category and beyond.

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BSP372N OptiMOS Small-Signal-Transistor Product Summary Features V 100 V DS N-channel R V =10 V 0.23 W DS(on),max GS Enhancement mode V =4.5 V 0.27 GS Logic Level (4.5V rated) I 1.8 A D Avalanche rated Qualified according to AEC Q101 PG-SOT223 100% lead-free RoHS compliant Halogen-free according to IEC61249-2-21 Type Package Tape and Reel Marking Halogen-Free Packing BSP372N BSP372N SOT223 H6327: 1000 pcs/ reel Yes Non dry Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit Continuous drain current I T =25C 1.8 A D A T =70C 1.5 A I T =25C Pulsed drain current 7.2 D,pulse A Avalanche energy, single pulse E I =1.8A, R =25W 33 mJ AS D GS I =1.8A, V =80V, D DS Reverse diode dv /dt dv /dt di /dt =200A/s, 6 kV/s T =150C j,max V Gate source voltage 20 V GS 1) P T =25C 1.8 W Power dissipation tot A Operating and storage temperature T , T -55 ... 150 C j stg ESD Class JESD22-A114 -HBM 0 (<250V) Soldering Temperature 260 C IEC climatic category DIN IEC 68-1 55/150/56 Rev 2.0 page 1 2013-04-03BSP372N Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance R - - 25 K/W thJS junction - soldering point Thermal resistance R minimal footprint - - 110 thJA 2 1) junction - ambient - - 70 6 cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics Drain-source breakdown voltage V V =0V, I =250A 100 - - V (BR)DSS GS D Gate threshold voltage V V =VgsV, I =218A 0.8 1.4 1.80 GS(th) DS D V =100V, V =0V, DS GS Drain-source leakage current I - - 0.1 mA DSS T =25C j V =100V, V =0V, DS GS - - 10 T =150C j Gate-source leakage current I V =20V, V =0V - - 10 nA GSS GS DS Gate-source on-state resistance R V =10V, I =1.8A - 153 230 mW DS(on) GS D V =4.5V, I =1.7A - 172 270 GS D V >2 I R , DS D DS(on)max g Transconductance 5.1 - S fs I =1.5A D 1) Device on 40mm x 40mm x 1.5mm epoxy PCB FR4 with 6cm (one layer, 70m thick) copper area for drain connection. PCB is vertical in still air. Rev 2.0 page 2 2013-04-03

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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