X-On Electronics has gained recognition as a prominent supplier of BSP372NH6327 MOSFETs across the USA, India, Europe, Australia, and various other global locations. BSP372NH6327 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

BSP372NH6327 Infineon

Name: BSP372NH6327
Brand: Infineon
SKU: BSP372NH6327_1_Infineon
Availability: OutOfStock
Rating: 5 (11 reviews)

BSP372NH6327 electronic component of Infineon

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See Product Specifications

Part No.	BSP372NH6327
Manufacturer:	Infineon
Category:	MOSFETs
Description:	MOSFET N Channel 100V 1.8A 1.8V @ 218uA 230mO @ 1.8A,10V SOT-223 RoHS
Datasheet:	BSP372NH6327 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 0.7878 ea
Line Total: USD 0.79

Availability - 0

MOQ: 1 Multiples: 1
Pack Size: 1

BSP372NH6327 More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Fri. 03 Jan to Wed. 08 Jan MOQ : 1 Multiples : 1	1 : USD 0.7878 10 : USD 0.6539 30 : USD 0.587 100 : USD 0.52 500 : USD 0.4799 1000 : USD 0.459

Specifications

Manufacturer Infineon Infineon
Product Category MOSFETs MOSFETs
Category MOSFET MOSFET
Rohs y y
Package SOT - 223 SOT - 223
Brand Category Infineon Infineon
Fet Type N Channel N Channel
Drain To Source Voltagevdss 100 V 100 V
Continuous Drain Current Id @ 25°C 1.8 A 1.8 A
Vgsth Max @ Id 1.8V @ 218uA 1.8V @ 218uA
Rds On Max @ Id Vgs 230mO @ 1.8A,10V 230mO @ 1.8A,10V
Power Dissipation-Max Ta 25°C 1.8 W 1.8 W
Drain Source Voltage Vdss 100 V 100 V
Continuous Drain Current Id 1.8 A 1.8 A
Drain Source On Resistance Rdson@Vgs Id 230 mOhms @10V , 1.8A 230 mOhms @10V , 1.8A
Power Dissipation Pd 1.8 W 1.8 W
Gate Threshold Voltage Vgsth@Id 1.8 V @218uA 1.8 V @218uA
Type N Channel N Channel

We are delighted to provide the BSP372NH6327 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BSP372NH6327 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The Infineon BSP372NH6327 is a n-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) packaged in a SOT-223RoHS casing. This transistor is rated at 100V, 1.8A, 1.8V @ 218uA, 230mO @ 1.8A, 10V. The MOSFET is used for switching and amplification purposes and can handle both low and high level signals. The low on-state resistance (RDS(on)) allows stable current flow even with low current signals, while the high-side gate-source voltage (VGS) limits is great for controlling larger signals with less losses and heat dissipation. The SOT-223 package allows the MOSFET to be mounted on a PCB board. The RoHS certification implies that this device contains no hazardous substances like cadmium, lead, and mercury.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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IR
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