X-On Electronics has gained recognition as a prominent supplier of BSP613P H6327 MOSFETs across the USA, India, Europe, Australia, and various other global locations. BSP613P H6327 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

BSP613P H6327 Infineon

BSP613P H6327 electronic component of Infineon
BSP613P H6327 Infineon
BSP613P H6327 MOSFETs
BSP613P H6327  Semiconductors

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See Product Specifications
Part No. BSP613P H6327
Manufacturer: Infineon
Category: MOSFETs
Description: Infineon Technologies MOSFET P-Ch -60V -2.9A SOT-223-3
Datasheet: BSP613P H6327 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.5125 ea
Line Total: USD 1.51 
Availability - 2341
Ship by Mon. 10 Mar to Wed. 12 Mar
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1843
Ship by Wed. 19 Mar to Mon. 24 Mar
MOQ : 1
Multiples : 1
1 : USD 1.4361
10 : USD 1.1722
30 : USD 0.8813
100 : USD 0.667
500 : USD 0.6105
1000 : USD 0.5841

2341
Ship by Mon. 10 Mar to Wed. 12 Mar
MOQ : 1
Multiples : 1
1 : USD 1.5125
10 : USD 0.99
100 : USD 0.6633
500 : USD 0.6039
1000 : USD 0.5357

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Package Case
Series
Transistor Type
Brand
Forward Transconductance Min
Fall Time
Id Continuous Drain Current
Pd Power Dissipation
Qg Gate Charge
Rds On Drain Source Resistance
Rise Time
Typical Turn Off Delay Time
Typical Turn On Delay Time
Vds Drain Source Breakdown Voltage
Vgs Gate Source Voltage
Vgs Th Gate Source Threshold Voltage
Rohs Mouser
Height
Length
Width
Forward Transconductance - Min
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BSP613P H6327 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BSP613P H6327 and other electronic components in the MOSFETs category and beyond.

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BSP613P SIPMOS Small-Signal-Transistor Product Summary Feature V -60 V DS P-Channel R 0.13 W DS(on) Enhancement mode I -2.9 A D Avalanche rated PG-SOT223 dv/dt rated Ideal for fast switching buck converter Drain pin 2,4 Gate pin1 Qualified according to AEC Q101 Source pin 3 HalogenfreeaccordingtoIE C61249221 Type Package Tape and reel Packaging Marking BSP613P PG-SOT223 H6327: 1000pcs/r. NonD r y B S P 613 P Maximum Ratings, at T = 25 C, unless otherwise specified j Parameter Symbol Value Unit A Continuous drain current I D T =25C -2.9 A T =70C -2.3 A -11.6 Pulsed drain current I D puls T =25C A Avalanche energy, single pulse E 150 mJ AS I =2.9 A , V =-25V, R =25W D DD GS 0.18 Avalanche energy, periodic limited by T E jmax AR 6 kV/s Reverse diode dv/dt dv/dt I =2.9A, V =-48V, di/dt=-200A/s, T =150C S DS jmax Gate source voltage V 20 V GS 1.8 W Power dissipation P tot T =25C A C Operating and storage temperature T , T -55... +150 j stg IEC climatic category DIN IEC 68-1 55/150/56 ESD Class Class 1c JESD22-A114-HBM Rev.2.8 Page 1 201 6- 05- 30 BSP613P Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics - - 19 K/W Thermal resistance, junction - soldering point R thJS (Pin 4) Thermal resistance, junction - ambient, leaded R - 100 - thJA SMD version, device on PCB: R thJA min. footprint - - 100 2 1) 6 cm cooling area - - 70 Electrical Characteristics, at T = 25 C, unless otherwise specified j Parameter Symbol Values Unit min. typ. max. Static Characteristics -60 - - V Drain-source breakdown voltage V (BR)DSS V =0, I =-250A GS D Gate threshold voltage, V = V V -2.1 -3 -4 GS DS GS(th) I =-1mA D A Zero gate voltage drain current I DSS V =-60V, V =0, T =25C - -0.1 -1 DS GS j V =-60V, V =0, T =125C - -10 -100 DS GS j Gate-source leakage current I - -10 -100 nA GSS V =-20V, V =0 GS DS - 0.11 0.13 Drain-source on-state resistance R W DS(on) V =-10V, I =2.9A GS D 1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Rev.2.8 Page 2 201 6- 05- 30

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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