X-On Electronics has gained recognition as a prominent supplier of BSP613PH6327XTSA1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. BSP613PH6327XTSA1 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

BSP613PH6327XTSA1 Infineon

BSP613PH6327XTSA1 electronic component of Infineon
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See Product Specifications
Part No.BSP613PH6327XTSA1
Manufacturer: Infineon
Category: MOSFETs
Description: Transistor: P-MOSFET; unipolar; -60V; -2.9A; 1.8W; PG-SOT223
Datasheet: BSP613PH6327XTSA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.474 ea
Line Total: USD 1.47 
Availability - 6338
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
5
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 0.5343

6338
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 1.474
10 : USD 0.9856
100 : USD 0.7106
500 : USD 0.5852
1000 : USD 0.5412
2000 : USD 0.5181
5000 : USD 0.5027

1420
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 1.484
10 : USD 1.2096
21 : USD 0.8512
56 : USD 0.8036
500 : USD 0.7756

7760
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1000
Multiples : 1000
1000 : USD 0.966

4741
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 46
Multiples : 1
46 : USD 0.8889
50 : USD 0.8857
100 : USD 0.8824
200 : USD 0.8645
2000 : USD 0.8613
4000 : USD 0.7817

   
Manufacturer
Product Category
Technology
Case
Mounting
Polarisation
Type Of Transistor
Drain-Source Voltage
Drain Current
On-State Resistance
Gate-Source Voltage
Power Dissipation
Brand Category
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We are delighted to provide the BSP613PH6327XTSA1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BSP613PH6327XTSA1 and other electronic components in the MOSFETs category and beyond.

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BSP613P SIPMOS Small-Signal-Transistor Product Summary Feature V -60 V DS P-Channel R 0.13 W DS(on) Enhancement mode I -2.9 A D Avalanche rated PG-SOT223 dv/dt rated Ideal for fast switching buck converter Drain pin 2,4 Gate pin1 Qualified according to AEC Q101 Source pin 3 HalogenfreeaccordingtoIE C61249221 Type Package Tape and reel Packaging Marking BSP613P PG-SOT223 H6327: 1000pcs/r. NonD r y B S P 613 P Maximum Ratings, at T = 25 C, unless otherwise specified j Parameter Symbol Value Unit A Continuous drain current I D T =25C -2.9 A T =70C -2.3 A -11.6 Pulsed drain current I D puls T =25C A Avalanche energy, single pulse E 150 mJ AS I =2.9 A , V =-25V, R =25W D DD GS 0.18 Avalanche energy, periodic limited by T E jmax AR 6 kV/s Reverse diode dv/dt dv/dt I =2.9A, V =-48V, di/dt=-200A/s, T =150C S DS jmax Gate source voltage V 20 V GS 1.8 W Power dissipation P tot T =25C A C Operating and storage temperature T , T -55... +150 j stg IEC climatic category DIN IEC 68-1 55/150/56 ESD Class Class 1c JESD22-A114-HBM Rev.2.8 Page 1 201 6- 05- 30 BSP613P Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics - - 19 K/W Thermal resistance, junction - soldering point R thJS (Pin 4) Thermal resistance, junction - ambient, leaded R - 100 - thJA SMD version, device on PCB: R thJA min. footprint - - 100 2 1) 6 cm cooling area - - 70 Electrical Characteristics, at T = 25 C, unless otherwise specified j Parameter Symbol Values Unit min. typ. max. Static Characteristics -60 - - V Drain-source breakdown voltage V (BR)DSS V =0, I =-250A GS D Gate threshold voltage, V = V V -2.1 -3 -4 GS DS GS(th) I =-1mA D A Zero gate voltage drain current I DSS V =-60V, V =0, T =25C - -0.1 -1 DS GS j V =-60V, V =0, T =125C - -10 -100 DS GS j Gate-source leakage current I - -10 -100 nA GSS V =-20V, V =0 GS DS - 0.11 0.13 Drain-source on-state resistance R W DS(on) V =-10V, I =2.9A GS D 1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Rev.2.8 Page 2 201 6- 05- 30

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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