BSP716N OptiMOS Small-Signal-Transistor Product Summary Features V 75 V DS N-channel R V =10 V 0.16 W DS(on),max GS Enhancement mode V =4.5 V 0.18 GS Logic Level (4.5V rated) I 2.3 A D Avalanche rated Qualified according to AEC Q101 PG-SOT223 100% lead-free RoHS compliant Halogen-free according to IEC61249-2-21 75.2 Type Package Tape and Reel Marking Halogen-Free Packing BSP716N BSP716N SOT223 H6327: 1000 pcs/ reel Yes Non dry Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit I T =25C Continuous drain current 2.3 A D A T =70C 1.8 A Pulsed drain current I T =25C 9.2 D,pulse A E I =2.3A, R =25W Avalanche energy, single pulse 33 mJ AS D GS I =2.3A, V =80V, D DS Reverse diode dv /dt dv /dt di /dt =200A/s, 6 kV/s T =150C j,max Gate source voltage V 20 V GS P T =25C 1.8 Power dissipation W tot A T , T Operating and storage temperature -55 ... 150 C j stg ESD Class JESD22-A114 -HBM 0 (<250V) Soldering Temperature 260 C IEC climatic category DIN IEC 68-1 55/150/56 Rev 2.0 page 1 2013-04-04BSP716N Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics Thermal resistance R - - 25 K/W thJS junction - soldering point R Thermal resistance minimal footprint - - 110 thJA 2 1) junction - ambient - - 70 6 cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0V, I =250A Drain-source breakdown voltage 75 - - V (BR)DSS GS D V V =VgsV, I =218A Gate threshold voltage 0.8 1.4 1.80 GS(th) DS D V =75V, V =0V, DS GS I Drain-source leakage current - - 0.1 mA DSS T =25C j V =75V, V =0V, DS GS - - 10 T =150C j I V =20V, V =0V Gate-source leakage current - - 10 nA GSS GS DS R V =10V, I =2.3A Drain-source on-state resistance - 122 160 mW DS(on) GS D V =4.5V, I =2.2A - 138 180 GS D V >2 I R , DS D DS(on)max Transconductance g 5.71 - S fs I =1.8A D 1) Device on 40mm x 40mm x 1.5mm epoxy PCB FR4 with 6cm (one layer, 70m thick) copper area for drain connection. PCB is vertical in still air. Rev 2.0 page 2 2013-04-04