Rev. 2.2 BSP88 SIPMOS Small-Signal-Transistor Product Summary Feature V 240 V DS N-Channel R 6 DS(on) Enhancement mode I 0.35 A D Logic Level PG-SOT223 dv/dt rated Pb-free lead plating RoHS compliant 4 2.8V rated Pb-free lead plating RoHS compliant 3 x Qualified according to AEC Q101 2 HalogenfreeaccordingtoIEC61249221 1 VPS05163 Marking Packaging Type Package Tape and Reel Information PG-SOT223 H BSP88 BSP88 6327: 1000 pcs/reel Non dry Maximum Ratings, at T = 25 C, unless otherwise specified j Parameter Symbol Value Unit A Continuous drain current I D T =25C 0.35 A T =70C 0.28 A 1.4 Pulsed drain current I D puls T =25C A 6 kV/s Reverse diode dv/dt dv/dt I =0.35A, V =192V, di/dt=200A/s, T =150C S DS jmax V Gate source voltage V 20 GS ESD class (JESD22-A114-HBM) 1A (>250V, <500V) 1.8 W Power dissipation P tot T =25C A C Operating and storage temperature T , T -55... +150 j stg IEC climatic category DIN IEC 68-1 55/150/56 Page 1 2012-11-29Rev. 2.2 BSP88 Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics - - 25 K/W Thermal resistance, junction - soldering point R thJS (Pin 4) SMD version, device on PCB: R thJA min. footprint - - 115 2 1) 6 cm cooling area - - 70 Electrical Characteristics, at T = 25 C, unless otherwise specified j Parameter Symbol Values Unit min. typ. max. Static Characteristics 240 - - V Drain-source breakdown voltage V (BR)DSS V =0, I =250A GS D 0.6 1 1.4 Gate threshold voltage, V = V V GS DS GS(th) I =108A D Zero gate voltage drain current I A DSS V =240V, V =0, T =25C - - 0.1 DS GS j V =240V, V =0, T =150C - - 10 DS GS j - 1 10 nA Gate-source leakage current I GSS V =20V, V =0 GS DS Drain-source on-state resistance R - 4.9 15 DS(on) V =2.8V, I =0.014A GS D - 4.6 7.5 Drain-source on-state resistance R DS(on) V =4.5V, I =0.32A GS D - 4 6 Drain-source on-state resistance R DS(on) V =10V, I =0.35A GS D 1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2012-11-29