BSR202N OptiMOS 2 Small-Signal-Transistor Product Summary Features V 20 V DS N-channel R V =4.5 V 21 m DS(on),max GS Enhancement mode V =2.5 V 33 GS Super Logic level (2.5V rated) I 3.8 A D Avalanche rated Footprint compatible to SOT23 PG-SC-59 dv /dt rated 3 Pb-free lead plating RoHS compliant Qualified according to AEC Q101 1 2 Type Package Tape and Reel Information Marking Lead Free Packing BSR202N PG-SC-59 L6327 = 3000 pcs. / reel LAs Yes Non dry Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit I T =25 C 3.8 A Continuous drain current D A T =70 C 3.1 A I T =25 C Pulsed drain current 15.2 D,pulse A E I =3.8 A, R =25 Avalanche energy, single pulse 30 mJ AS D GS I =3.8 A, V =16 V, D DS Reverse diode dv /dt dv /dt di /dt =200 A/s, 6 kV/s T =150 C j,max V Gate source voltage 12 V GS P T =25 C Power dissipation 0.5 W tot A Operating and storage temperature T , T -55 ... 150 C j stg ESD Class JESD22-A114-HBM 0 (0V to 250V) Soldering Temperature 260 C IEC climatic category DIN IEC 68-1 55/150/56 Rev. 1.09Rev. 1.09 page 1page 1 2012-07-312012-07-31BSR202N Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics Thermal resistance, R - - 250 K/W thJA junction - minimal footprint Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V = 0 V, I = 250 A Drain-source breakdown voltage 20 - - V (BR)DSS GS D Gate threshold voltage V V =V , I =30 A 0.7 0.95 1.2 GS(th) DS GS D V =20 V, V =0 V, DS GS Drain-source leakage current I -- 1 A DSS T =25 C j V =20 V, V =0 V, DS GS - - 100 T =150 C j Gate-source leakage current I V =12 V, V =0 V - - 100 nA GSS GS DS R V =2.5 V, I =3 A Drain-source on-state resistance -25 33 m DS(on) GS D V =4.5 V, I =3.8 A -17 21 GS D V >2 I R , DS D DS(on)max g Transconductance 17 - S fs I =3.8 A D Rev. 1.09Rev. 1.09 page 2page 2 2012-07-312012-07-31