BSR92P SIPMOS Small-Signal-Transistor Product Summary Features V -250 V DS P-Channel R 11 W DS(on),max Enhancement mode / Logic level I -0.14 A D Avalanche rated Pb-free lead plating RoHS compliant Footprint compatible to SOT23 PG-SC59 Qualified according to AEC Q101 Halogen free according to IEC61249-2-21 Type Package Tape and Reel Information Marking Halogen-free Packing LDs BSR92P PG-SC59 H6327 = 3000 pcs. / reel Yes Non dry Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit steady state Continuous drain current I T =25C -0.14 A D A T =70C -0.11 A I T =25C -0.56 Pulsed drain current D,pulse A Avalanche energy, single pulse E I =-0.14A, R =25W 24 mJ AS D GS Gate source voltage V 20 V GS P T =25C Power dissipation 0.5 W tot C T , T -55 ... 150 Operating and storage temperature C j stg 1A (250V to 500V) ESD class JESD22-A114 (HBM) Soldering temperature 260 C 55/150/56 IEC climatic category DIN IEC 68-1 Rev 1.06 page 1 2019-05-21 BSR92P Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, minimal footprint, R - - 250 K/W thJA junction - ambient steady state Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0V, I =-250A Drain-source breakdown voltage -250 - - V (BR)DSS GS D V =V , DS GS Gate threshold voltage V -2 -1.5 -1 GS(th) I =-130A D V =-250V, V =0V, DS GS I Zero gate voltage drain current - -0.1 -1 A DSS T =25C j V =-250V, V =0V, DS GS - -10 -100 T =150C j I V =-20V, V =0V Gate-source leakage current - -10 -100 nA GSS GS DS V =-2.8V, GS - 11 20 I =-0.025A D V =-4.5V, I =- GS D R Drain-source on-state resistance - 9 13 W DS(on) 0.13A V =-10V, GS - 8 11 I =-0.14A D V >2 I R , DS D DS(on)max g Transconductance 0.1 0.3 - S fs I =-0.11A D Rev 1.06 page 2 2019-05-21