X-On Electronics has gained recognition as a prominent supplier of BSS169 H6327 MOSFETs across the USA, India, Europe, Australia, and various other global locations. BSS169 H6327 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

BSS169 H6327 Infineon

BSS169 H6327 electronic component of Infineon
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Part No.BSS169 H6327
Manufacturer: Infineon
Category: MOSFETs
Description: Infineon Technologies MOSFET N-Ch 100V 90mA SOT-23-3
Datasheet: BSS169 H6327 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.1372 ea
Line Total: USD 0.69 
Availability - 79780
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
79780
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 5
Multiples : 5
5 : USD 0.1372
50 : USD 0.1133
150 : USD 0.101
500 : USD 0.0908
3000 : USD 0.0873
6000 : USD 0.0851

94245
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.4653
10 : USD 0.3806
100 : USD 0.2596
1000 : USD 0.1562
3000 : USD 0.1419
9000 : USD 0.1287
24000 : USD 0.1243
45000 : USD 0.1221
99000 : USD 0.1188

5820
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 280
Multiples : 1
280 : USD 0.3648
500 : USD 0.3515
1000 : USD 0.3401
2500 : USD 0.3301
5000 : USD 0.3212

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Gate-Source Voltage Max
Operating Temp Range
Package Type
Pin Count
Type
Number Of Elements
Operating Temperature Classification
Drain-Source On-Volt
Rad Hardened
Configuration
Height
Length
Product
Series
Transistor Type
Width
Brand
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the BSS169 H6327 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BSS169 H6327 and other electronic components in the MOSFETs category and beyond.

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BSS169 SIPMOS Small-Signal-Transistor Product Summary Features V 100 V DS N-channel R 12 W DS(on),max Depletion mode I 0.09 A DSS,min dv /dt rated Available with V indicator on reel GS(th) Pb-free lead-plating RoHS compliant PG-SOT-23 Halogen-free according to AEC61249-2-21 Qualified according to AEC Q101 Type Package Pb-free Tape and Reel Information Marking BSS169 PG-SOT-23 Yes H6327: 3000 pcs/reel SFs 1) BSS169 PG-SOT-23 Yes H6906: 3000 pcs/reel sorted in V bands SFs GS(th) Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25C Continuous drain current 0.17 A D A T =70C 0.14 A I T =25C Pulsed drain current 0.68 D,pulse A I =0.19A, V =20V, D DS Reverse diode dv /dt dv /dt di /dt =200A/s, 6 kV/s T =150C j,max Gate source voltage V 20 V GS ESD Class JESD22-A114-HBM Class 0 P T =25C Power dissipation 0.36 W tot A Operating and storage temperature T , T -55 ... 150 C j stg IEC climatic category DIN IEC 68-1 55/150/56 1) see table on next page and diagram 11 Rev. 1.8 page 1 2015-06-10BSS169 Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, R minimal footprint - - 250 K/W thJA junction - ambient Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics Drain-source breakdown voltage V V =-10V, I =250A 100 - - V (BR)DSS GS D V V =3V, I =50A Gate threshold voltage -2.9 -2.2 -1.8 GS(th) DS D V =100V, DS I Drain-source cutoff current - - 0.1 A D(off) V =-10V, T =25C GS j V =100V, DS - - 10 V =-10V, T =125C GS j I V =20V, V =0V Gate-source leakage current - - 10 nA GSS GS DS On-state drain current I V =0V, V =10V 90 - - mA DSS GS DS Drain-source on-state resistance R V =0V, I =0.05A - 5.3 12 DS(on) GS D W V =10V, I =0.19A - 2.9 GS D V >2 I R , DS D DS(on)max g Transconductance 0.20 - S fs I =0.15A D 2) Threshold voltage V sorted in bands GS(th) J V V =3V, I =50A -2 - -1.8 V GS(th) DS D K -2.15 - -1.95 L -2.3 - -2.1 M -2.45 - -2.25 N -2.6 - -2.4 2) Each reel contains transistors out of one band whose identifying letter is printed on the reel label. A specific band cannot be ordered separately. Rev. 1.8 page 2 2015-06-10

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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