X-On Electronics has gained recognition as a prominent supplier of BSS169H6327XT MOSFETs across the USA, India, Europe, Australia, and various other global locations. BSS169H6327XT MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

BSS169H6327XT Infineon

BSS169H6327XT electronic component of Infineon
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See Product Specifications
Part No.BSS169H6327XT
Manufacturer: Infineon
Category: MOSFETs
Description: MOSFET SIPMOS Small Signal Transistor
Datasheet: BSS169H6327XT Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.4653 ea
Line Total: USD 0.47 
Availability - 63441
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
63441
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.4653
10 : USD 0.3806
100 : USD 0.2596
1000 : USD 0.1562
3000 : USD 0.1419
9000 : USD 0.1287
24000 : USD 0.1243
45000 : USD 0.1221
99000 : USD 0.1188

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Gate Charge Qg
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Product
Transistor Type
Type
Width
Forward Transconductance - Min
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BSS169H6327XT from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BSS169H6327XT and other electronic components in the MOSFETs category and beyond.

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BSS169 SIPMOS Small-Signal-Transistor Product Summary Features V 100 V DS N-channel R 12 W DS(on),max Depletion mode I 0.09 A DSS,min dv /dt rated Available with V indicator on reel GS(th) Pb-free lead-plating RoHS compliant PG-SOT-23 Halogen-free according to AEC61249-2-21 Qualified according to AEC Q101 Type Package Pb-free Tape and Reel Information Marking BSS169 PG-SOT-23 Yes H6327: 3000 pcs/reel SFs 1) BSS169 PG-SOT-23 Yes H6906: 3000 pcs/reel sorted in V bands SFs GS(th) Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25C Continuous drain current 0.17 A D A T =70C 0.14 A I T =25C Pulsed drain current 0.68 D,pulse A I =0.19A, V =20V, D DS Reverse diode dv /dt dv /dt di /dt =200A/s, 6 kV/s T =150C j,max Gate source voltage V 20 V GS ESD Class JESD22-A114-HBM Class 0 P T =25C Power dissipation 0.36 W tot A Operating and storage temperature T , T -55 ... 150 C j stg IEC climatic category DIN IEC 68-1 55/150/56 1) see table on next page and diagram 11 Rev. 1.8 page 1 2015-06-10BSS169 Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, R minimal footprint - - 250 K/W thJA junction - ambient Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics Drain-source breakdown voltage V V =-10V, I =250A 100 - - V (BR)DSS GS D V V =3V, I =50A Gate threshold voltage -2.9 -2.2 -1.8 GS(th) DS D V =100V, DS I Drain-source cutoff current - - 0.1 A D(off) V =-10V, T =25C GS j V =100V, DS - - 10 V =-10V, T =125C GS j I V =20V, V =0V Gate-source leakage current - - 10 nA GSS GS DS On-state drain current I V =0V, V =10V 90 - - mA DSS GS DS Drain-source on-state resistance R V =0V, I =0.05A - 5.3 12 DS(on) GS D W V =10V, I =0.19A - 2.9 GS D V >2 I R , DS D DS(on)max g Transconductance 0.20 - S fs I =0.15A D 2) Threshold voltage V sorted in bands GS(th) J V V =3V, I =50A -2 - -1.8 V GS(th) DS D K -2.15 - -1.95 L -2.3 - -2.1 M -2.45 - -2.25 N -2.6 - -2.4 2) Each reel contains transistors out of one band whose identifying letter is printed on the reel label. A specific band cannot be ordered separately. Rev. 1.8 page 2 2015-06-10

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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