BSS192P SIPMOS Small-Signal-Transistor Product Summary Feature V -250 V DS P-Channel R 12 DS(on) Enhancement mode I -0.19 A D Logic Level PG-SOT89 dv/dt rated 1 Drain 2 pin 2 3 QualifiedaccordingtoAECQ101 Gate pin1 HalogenfreeaccordingtoIEC61249221 Source 2 pin 3 VPS05162 Type Package Pb-free Tape and Reel Information Marking PG-SOT89 Yes BSS 192 P H6327: 1000 pcs/reel KC Maximum Ratings, at T = 25 C, unless otherwise specified j Parameter Symbol Value Unit A Continuous drain current I D T =25C -0.19 A T =70C -0.1 A -0.76 Pulsed drain current I D puls T =25C A 6 kV/s Reverse diode dv/dt dv/dt I =-0.19A, V =-200V, di/dt=-200A/s, T =150C S DS jmax V Gate source voltage V 20 GS 1 W Power dissipation P tot T =25C A C Operating and storage temperature T , T -55... +150 j stg 55/150/56 IEC climatic category DIN IEC 68-1 ESD Class Class 1a JESD22-A114-HBM Rev 1.7 Page 1 2012-12-03 BSS 192 P Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics - - 10 K/W Thermal resistance, junction - soldering point R thJS (Pin 2) - - 125 Thermal resistance, junction - ambient, leaded R thJA Electrical Characteristics, at T = 25 C, unless otherwise specified j Parameter Symbol Values Unit min. typ. max. Static Characteristics -250 - - V Drain-source breakdown voltage V (BR)DSS V =0, I =-250A GS D -1 -1.5 -2 Gate threshold voltage, V = V V GS DS GS(th) I =-130A D A Zero gate voltage drain current I DSS V =-250V, V =0, T =25C - -0.1 -0.2 DS GS j V =-250V, V =0, T =150C - -10 -100 DS GS j - -10 -100 nA Gate-source leakage current I GSS V =-20V, V =0 GS DS Drain-source on-state resistance R - 10 20 DS(on) V =-2.8V, I =-0.025A GS D - 8.3 15 Drain-source on-state resistance R DS(on) V =-4.5V, I =-0.1A GS D - 7.7 12 Drain-source on-state resistance R DS(on) V =-10V, I =-0.19A GS D Rev 1.7 Page 2 2012-12-03