BSS205N OptiMOS 2 Small-Signal-Transistor Product Summary Features V 20 V DS N-channel R V =4.5 V 50 m DS(on),max GS Enhancement mode V =2.5 V 85 GS Super Logic level (2.5V rated) I 2.5 A D Avalanche rated Qualified according to AEC Q101 PG-SOT23 100% lead-free RoHS compliant 3 Halogen-free according to IEC61249-2-21 1 2 Type Package Tape and Reel Information Marking Lead Free Packing BSS205N SOT23 H6327: 3000 pcs/ reel SZs Yes Non dry Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit I T =25 C Continuous drain current 2.5 A D A T =70 C 2.0 A I T =25 C Pulsed drain current 10 D,pulse A Avalanche energy, single pulse E I =2.5 A, R =25 10.8 mJ AS D GS I =2.5 A, V =16 V, D DS Reverse diode dv /dt dv /dt di /dt =200 A/s, 6 kV/s T =150 C j,max V Gate source voltage 12 V GS 1) P T =25 C 0.5 W Power dissipation tot A T , T Operating and storage temperature -55 ... 150 C j stg ESD Class JESD22-A114 -HBM 0 (<250V) Soldering Temperature 260 C IEC climatic category DIN IEC 68-1 55/150/56 Rev 2.4 page 1 2011-07-08BSS205N Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, 1) R - - 250 K/W minimal footprint thJA junction - ambient Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V = 0 , I = 250 A Drain-source breakdown voltage 20 - - V (BR)DSS GS D Gate threshold voltage V V =V , I =11 A 0.7 0.95 1.2 GS(th) DS GS D V =20 V, V =0 V, DS GS I Drain-source leakage current -- 1 A DSS T =25 C j V =20 V, V =0 V, DS GS - - 100 T =150 C j I V =12 V, V =0 V Gate-source leakage current - - 100 nA GSS GS DS Drain-source on-state resistance R V =2.5 V, I =1.95 A -63 85 m DS(on) GS D V =4.5 V, I =2.5 A -40 50 GS D V >2 I R , DS D DS(on)max g Transconductance 8.5 - S fs I =2 A D 1) 2 Performed on 40mm FR4 PCB. The traces are 1mm wide, 70 m thick and 20mkm long they are present on both sides of the PCB. Rev 2.4 page 2 2011-07-08