X-On Electronics has gained recognition as a prominent supplier of BSS205NH6327XT MOSFETs across the USA, India, Europe, Australia, and various other global locations. BSS205NH6327XT MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

BSS205NH6327XT Infineon

BSS205NH6327XT electronic component of Infineon
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See Product Specifications
Part No.BSS205NH6327XT
Manufacturer: Infineon
Category: MOSFETs
Description: MOSFET OptiMOS 2 Small Signal Transistor
Datasheet: BSS205NH6327XT Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.3388 ea
Line Total: USD 0.34 
Availability - 7934
Ship by Mon. 18 Nov to Wed. 20 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
7934
Ship by Mon. 18 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 0.3388
10 : USD 0.262
100 : USD 0.1627
1000 : USD 0.0891
3000 : USD 0.0825
9000 : USD 0.0713
24000 : USD 0.068
45000 : USD 0.0658
99000 : USD 0.0635

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Configuration
Package Case
Series
Brand
Continuous Drain Current
Drain Source Breakdown Voltage
Gate Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Gate Charge Qg
Rise Time
Factory Pack Quantity :
Typical Turn Off Delay Time
Rohs Mouser
Height
Length
Transistor Type
Width
Forward Transconductance - Min
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the BSS205NH6327XT from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BSS205NH6327XT and other electronic components in the MOSFETs category and beyond.

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BSS205N OptiMOS 2 Small-Signal-Transistor Product Summary Features V 20 V DS N-channel R V =4.5 V 50 m DS(on),max GS Enhancement mode V =2.5 V 85 GS Super Logic level (2.5V rated) I 2.5 A D Avalanche rated Qualified according to AEC Q101 PG-SOT23 100% lead-free RoHS compliant 3 Halogen-free according to IEC61249-2-21 1 2 Type Package Tape and Reel Information Marking Lead Free Packing BSS205N SOT23 H6327: 3000 pcs/ reel SZs Yes Non dry Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit I T =25 C Continuous drain current 2.5 A D A T =70 C 2.0 A I T =25 C Pulsed drain current 10 D,pulse A Avalanche energy, single pulse E I =2.5 A, R =25 10.8 mJ AS D GS I =2.5 A, V =16 V, D DS Reverse diode dv /dt dv /dt di /dt =200 A/s, 6 kV/s T =150 C j,max V Gate source voltage 12 V GS 1) P T =25 C 0.5 W Power dissipation tot A T , T Operating and storage temperature -55 ... 150 C j stg ESD Class JESD22-A114 -HBM 0 (<250V) Soldering Temperature 260 C IEC climatic category DIN IEC 68-1 55/150/56 Rev 2.4 page 1 2011-07-08BSS205N Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, 1) R - - 250 K/W minimal footprint thJA junction - ambient Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V = 0 , I = 250 A Drain-source breakdown voltage 20 - - V (BR)DSS GS D Gate threshold voltage V V =V , I =11 A 0.7 0.95 1.2 GS(th) DS GS D V =20 V, V =0 V, DS GS I Drain-source leakage current -- 1 A DSS T =25 C j V =20 V, V =0 V, DS GS - - 100 T =150 C j I V =12 V, V =0 V Gate-source leakage current - - 100 nA GSS GS DS Drain-source on-state resistance R V =2.5 V, I =1.95 A -63 85 m DS(on) GS D V =4.5 V, I =2.5 A -40 50 GS D V >2 I R , DS D DS(on)max g Transconductance 8.5 - S fs I =2 A D 1) 2 Performed on 40mm FR4 PCB. The traces are 1mm wide, 70 m thick and 20mkm long they are present on both sides of the PCB. Rev 2.4 page 2 2011-07-08

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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