BSS314PE OptiMOS-P 3 Small-Signal-Transistor Product Summary Features V 30 V DS P-channel R V =-10 V 140 mW DS(on),max GS Enhancement mode V =-4.5 V 230 GS Logic level (4.5V rated) I -1.5 A D ESD protected PG-SOT-23 Qualified according AEC Q101 3 100% Lead-free RoHS compliant Halogen-free according to IEC61249-2-21 1 1 2 2 3 Type Package Tape and Reel Information Marking Lead Free Packing BSS314PE PG-SOT23 H6327: 3000 pcs/ reel Yes Non dry YGs Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25C Continuous drain current -1.5 A D A T =70C -1.2 A I T =25C Pulsed drain current -6.1 D,pulse A Avalanche energy, single pulse E I =-1.5A, R =25W 6 mJ AS D GS I =-1.5A, D V =-16V, DS Reverse diode dv /dt dv /dt 6 kV/s di /dt =-200A/s, T =150C j,max V Gate source voltage 20 V GS 1) P T =25C 0.5 W Power dissipation tot A Operating and storage temperature T , T -55 ... 150 C j stg ESD Class JESD22-A114 -HBM 1000V to 2000V Soldering Temperature 260 C C IEC climatic category DIN IEC 68-1 55/150/56 C Rev 2.3 page 1 2012-10-19BSS314PE Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics Thermal resistance, 1) R - - 250 K/W minimal footprint thJA junction - ambient Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V = 0V, I =-250A Drain-source breakdown voltage -30 - - V (BR)DSS GS D V V =V , I =-6.3A Gate threshold voltage -1 -1.5 -2 GS(th) DS GS D V =-30V, V =0V, DS GS I Drain-source leakage current - - -1 mA DSS T =25C j V =-30V, V =0V, DS GS - - -100 T =150C j I V =-20V, V =0V Gate-source leakage current - - -5 A GSS GS DS V =-4.5V, GS Drain-source on-state resistance R - 153 230 mW DS(on) I =-1.2A D V =-10V, I =-1.5A - 107 140 GS D V >2 I R , DS D DS(on)max g Transconductance 3 - S fs I =-1.2A D 1) 2 Performed on 40mm FR4 PCB. The traces are 1mm wide, 70 m thick and 20mm long they are present on both sides of the PCB. Rev 2.3 page 2 2012-10-19