BSS315P OptiMOS-P 2 Small-Signal-Transistor Product Summary Features V 30 V DS P-channel R V =10 V 150 m DS(on),max GS V =4.5 V 270 Enhancement mode GS I -1.5 A D Logic level (4.5V rated) Avalanche rated PG-SOT-23 Qualified according to AEC Q101 3 100% lead-free RoHS compliant Halogen-free according to AEC61249-2-21 1 2 Type Package Tape and Reel Information Marking Lead Free Packing BSS315P PG-SOT23 H6327: 3000 pcs/ reel YCs Yes Non dry Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit I T =25 C Continuous drain current -1.5 A D A T =70 C -1.18 A I T =25 C Pulsed drain current -6 D,pulse A Avalanche energy, single pulse E I =-1.5 A, R =25 11 mJ AS D GS I =-1.5 A, D V =-16V, DS 6 kV/s Reverse diode dv /dt dv /dt di /dt =-200A/s, T =150 C j,max V Gate source voltage 20 V GS 1) P T =25 C 0.5 W Power dissipation tot A T , T Operating and storage temperature -55 ... 150 C j stg ESD Class JESD22-A114 -HBM 0 (<250V) V Soldering Temperature 260 C C IEC climatic category DIN IEC 68-1 55/150/56 C Rev 2.3 page 1 2011-07-06BSS315P Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, 1) R - - 250 K/W minimal footprint thJA junction - ambient Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V = 0V, I =-250A Drain-source breakdown voltage -30 - - V (BR)DSS GS D Gate threshold voltage V V =V , I =-11A -2.0 -1.5 -1.0 GS(th) DS GS D V =-30V, V =0 V, DS GS I Drain-source leakage current -- -1 A DSS T =25 C j V =-30V, V =0V, DS GS - - -100 T =150 C j I V =-20V, V =0V Gate-source leakage current - - -100 nA GSS GS DS V =-4.5 V, GS Drain-source on-state resistance R - 177 270 m DS(on) I =-1.1 A D V =-10 V, GS - 113 150 I =-1.5 A D V >2 I R , DS D DS(on)max Transconductance g - 2.7 - S fs I =-1.18 A D 1) 2 Performed on 40mm FR4 PCB. The traces are 1mm wide, 70m thick and 20mm long they are present on both sides of the PCB. Rev 2.3 page 2 2011-07-06