BSS316N OptiMOS 2 Small-Signal-Transistor Product Summary Features V 30 V DS N-channel R V =10 V 160 m DS(on),max GS Enhancement mode V =4.5 V 280 GS Logic level (4.5V rated) I 1.4 A D Avalanche rated Qualified according to AEC Q101 PG-SOT23 100%lead-free RoHS compliant 3 Halogen-free according to IEC61249-2-21 1 2 Type Package Tape and Reel Information Marking Lead Free Packing BSS316N SOT23 H6327: 3000 pcs/ reel SYs Yes Non dry Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit I T =25 C Continuous drain current 1.4 A D A T =70 C 1.1 A I T =25 C Pulsed drain current 5.6 D,pulse A Avalanche energy, single pulse E I =1.4 A, R =25 3.7 mJ AS D GS I =1.4 A, V =16 V, D DS Reverse diode dv /dt dv /dt di /dt =200 A/s, 6 kV/s T =150 C j,max V Gate source voltage 20 V GS P T =25 C 0.5 Power dissipation W tot A T , T Operating and storage temperature -55 ... 150 C j stg ESD Class JESD22-A114 -HBM 0 (<250V) Soldering Temperature 260 C IEC climatic category DIN IEC 68-1 55/150/56 Rev 2.3 page 1 2011-07-06BSS316N Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, 1) R - - 250 K/W minimal footprint thJA junction - ambient Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics Drain-source breakdown voltage V V =0 V, I =250 A 30 - - V (BR)DSS GS D V V =V , I =3.7 A Gate threshold voltage 1.2 1.6 2.0 GS(th) DS GS D V =30 V, V =0 V, DS GS I Drain-source leakage current -- 1 A DSS T =25 C j V =30 V, V =0 V, DS GS - - 100 T =150 C j I V =30 V, V =0 V Gate-source leakage current - - 100 nA GSS GS DS Drain-source on-state resistance R V =4.5 V, I =1.1 A - 191 280 DS(on) GS D m V =10 V, I =1.4 A - 119 160 GS D V >2 I R , DS D DS(on)max Transconductance g 2.3 - S fs I =1.1 A D 1) 2 Performed on 40mm FR4 PCB. The traces are 1mm wide, 70m thick and 20mm long they are present on both sides of the PCB. Rev 2.3 page 2 2011-07-06