X-On Electronics has gained recognition as a prominent supplier of BSS606NH6327XTSA1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. BSS606NH6327XTSA1 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

BSS606NH6327XTSA1 Infineon

BSS606NH6327XTSA1 electronic component of Infineon
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Part No.BSS606NH6327XTSA1
Manufacturer: Infineon
Category: MOSFETs
Description: Transistor: N-MOSFET; unipolar; 60V; 3.2A; 1W; PG-SOT89
Datasheet: BSS606NH6327XTSA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1000: USD 0.1576 ea
Line Total: USD 157.6 
Availability - 47530
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ: 1000  Multiples: 1000
Pack Size: 1000
Availability Price Quantity
2225
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 5
Multiples : 5
5 : USD 0.3508
50 : USD 0.2788
150 : USD 0.2478
1000 : USD 0.2094
2000 : USD 0.1922
5000 : USD 0.182

14761
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.5852
10 : USD 0.396
100 : USD 0.2695
500 : USD 0.2145
1000 : USD 0.1958
2000 : USD 0.1639
10000 : USD 0.1628
25000 : USD 0.1573

970
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.7
10 : USD 0.4704
50 : USD 0.3878
74 : USD 0.231
204 : USD 0.2184

5519
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 71
Multiples : 1
71 : USD 0.5785
104 : USD 0.3932
200 : USD 0.3917
500 : USD 0.3088
1000 : USD 0.2795

47530
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1000
Multiples : 1000
1000 : USD 0.1576
2000 : USD 0.156
3000 : USD 0.1544
5000 : USD 0.145
7000 : USD 0.1436
10000 : USD 0.1372
25000 : USD 0.1355

   
Manufacturer
Product Category
Technology
Polarisation
Case
Mounting
Type Of Transistor
Drain-Source Voltage
Gate-Source Voltage
Drain Current
On-State Resistance
Power Dissipation
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We are delighted to provide the BSS606NH6327XTSA1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BSS606NH6327XTSA1 and other electronic components in the MOSFETs category and beyond.

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BSS606N OptiMOS -3 Small-Signal-Transistor Product Summary Features V 60 V DS N-channel R V =10 V 60 mW DS(on),max GS Enhancement mode V =4.5 V 90 GS Logic level (4.5V rated) I 3.2 A D Avalanche rated Qualified according to AEC Q101 PG-SOT-89 100%lead-free Halogen-free RoHS compliant 4 1 2 3 Type Package Tape and Reel Information Marking Halogen-free Package BSS606N PG-SOT-89 H6327: 3000 pcs/ reel KE Yes Non-dry Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit I T =25C Continuous drain current 3.2 A D A T =70C 2.6 A I T =25C Pulsed drain current 12.8 D,pulse A E I =3.2A, R =25W Avalanche energy, single pulse 14 mJ AS D GS I =3.2A, V =48V, D DS Reverse diode dv /dt dv /dt di /dt =100A/s, 6 kV/s T =150C j,max V Gate source voltage 20 V GS 1) P T =25C 1.0 W Power dissipation tot A T , T Operating and storage temperature -55 ... 150 C j stg ESD Class JESD22-A114 -HBM class 0 (< 250V) Soldering Temperature 260 C IEC climatic category DIN IEC 68-1 55/150/56 1) Value refers to minimum footprint Rev 2.2 page 1 2013-04-03BSS606N Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, R - - 10 K/W thJC junction - case SMD version, device on PCB R minimal footprint - - 125 thJA 2 2) - - 70 6 cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics Drain-source breakdown voltage V V =0V, I =250A 60 - - V (BR)DSS GS D Gate threshold voltage V V =0V, I =15A 1.3 1.8 2.3 GS(th) DS D V =60V, V =0V, DS GS Drain-source leakage current I - - 1 mA DSS T =25C j V =60V, V =0V, DS GS - - 100 T =150C j Gate-source leakage current I V =20V, V =0V - - 100 nA GSS GS DS R V =4.5V, I =2.6A Drain-source on-state resistance - 66 90 mW DS(on) GS D V =10V, I =3.2A - 47 60 GS D V >2 I R , DS D DS(on)max g Transconductance - 6 - S fs I =2.6A D 2) 2 Performed on 40mmx40mmx1.5mm epoxy FR4 PCB with 6cm (one layer, 70 m thick) copper area for drain connectio. PCB is vertical without blown air. Rev 2.2 page 2 2013-04-03

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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