X-On Electronics has gained recognition as a prominent supplier of BSS84PH6433XTMA1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. BSS84PH6433XTMA1 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

BSS84PH6433XTMA1 Infineon

BSS84PH6433XTMA1 electronic component of Infineon
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Part No.BSS84PH6433XTMA1
Manufacturer: Infineon
Category: MOSFETs
Description: MOSFET P-Ch -60V -170mA SOT-23-3
Datasheet: BSS84PH6433XTMA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.1947 ea
Line Total: USD 0.19 
Availability - 109494
Ship by Fri. 22 Nov to Tue. 26 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
14
Ship by Tue. 26 Nov to Mon. 02 Dec
MOQ : 1
Multiples : 1
1 : USD 0.3565
10 : USD 0.055

109494
Ship by Fri. 22 Nov to Tue. 26 Nov
MOQ : 1
Multiples : 1
1 : USD 0.1947
10 : USD 0.0924
100 : USD 0.066
1000 : USD 0.0583
2500 : USD 0.0539
10000 : USD 0.0495
20000 : USD 0.0462
50000 : USD 0.0462
100000 : USD 0.0462

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
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Packaging
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Gate Charge Qg
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
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We are delighted to provide the BSS84PH6433XTMA1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BSS84PH6433XTMA1 and other electronic components in the MOSFETs category and beyond.

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BSS84P SIPMOS Small-Signal-Transistor Product Summary Feature V -60 V DS P-Channel R 8 DS(on) Enhancement mode I -0.17 A D Logic Level PG-SOT-23 Avalanche rated 3 dv/dt rated 2 Qualified according to AEC Q101 1 VPS05161 Halogen-free according to IEC61249-2-21 Drain Tape and Reel Type Package Marking pin 3 Gate BSS84P PG-SOT-23 H 6327:3000pcs/r. YBs pin1 Source BSS84P PG-SOT-23H6433:10000pcs/r. YBs pin 2 Maximum Ratings, at T = 25 C, unless otherwise specified A Parameter Symbol Value Unit A Continuous drain current I D T =25C -0.17 A T =70C -0.14 A -0.68 Pulsed drain current I D puls T =25C A 2.6 mJ Avalanche energy, single pulse E AS I =-0.17 A , V =-25V, R =25 DD GS D E 0.036 Avalanche energy, periodic limited by T AR jmax Reverse diode dv/dt dv/dt -6 kV/s I =-0.17A, V =-48V, di/dt=-200A/s, T =150C DS jmax S Gate source voltage V V 20 GS Power dissipation P 0.36 W tot T =25C A C Operating and storage temperature T , T -55... +150 j stg IEC climatic category DIN IEC 68-1 55/150/56 ESD Class Class 0 JESD22-A114-HBM Rev 2.7 Page 1 2011-07-11 BSS84P Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics - - 200 K/W Thermal resistance, junction - soldering point R thJS (Pin 3) SMD version, device on PCB: R thJA min. footprint - - 350 2 1) 6 cm cooling area - - 300 Electrical Characteristics, at T = 25 C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. Static Characteristics V -60 - - V Drain-source breakdown voltage (BR)DSS V =0, I =-250A GS D -1 -1.5 -2 Gate threshold voltage, V = V V GS DS GS(th) I =-20A D A Zero gate voltage drain current I DSS V =-60V, V =0, T =25C - -0.1 -1 DS GS A V =-60V, V =0, T =125C - -10 -100 DS GS A - -10 -100 nA Gate-source leakage current I GSS V =-20V, V =0 GS DS - 8 12 Drain-source on-state resistance R DS(on) V =-4.5V, I =-0.14A GS D - 5.8 8 Drain-source on-state resistance R DS(on) V =-10V, I =-0.17A GS D 1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Rev 2.7 Page 2 2011-07-11

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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