BSS84PW SIPMOS Small-Signal-Transistor Features Product Summary P-Channel Drain source voltage V -60 V DS Enhancement mode Drain-source on-state resistance 8 R W DS(on) Avalanche rated Continuous drain current -0.15 A I D Logic Level 3 dv/dt rated 2 Qualified according to AEC Q101 1 VSO05561 Halogen-free according to IEC61249-2-21 Type Package Tape and Reel Marking Pin 1 PIN 2 PIN 3 BSS84PW PG-SOT-323 H6327:3000pcs/r. YBs G S D Maximum Ratings,at T = 25 C, unless otherwise specified j Parameter Symbol Value Unit Continuous drain current -0.15 A I D T = 25 C A Pulsed drain current -0.6 I D puls T = 25 C A Avalanche energy, single pulse 2.61 mJ E AS I = -0.15 A , V = -25 V, R = 25 W D DD GS E 0.03 Avalanche energy, periodic limited by T AR jmax Reverse diode dv/dt dv/dt 6 kV/s I = -0.15 A, V = -48 V, di/dt = 200 A/s, S DS T = 150 C jmax Gate source voltage V 20 V GS Power dissipation P 0.3 W tot T = 25 C A Operating and storage temperature -55...+150 C T , T j stg IEC climatic category DIN IEC 68-1 55/150/56 ESD Class Class 0 JESF22-A114-HBM Rev 2.0 Page 1 201 6-0 6-21 BSS84PW Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - soldering point - - 110 K/W R thJS (Pin 3) SMD version, device on PCB: R thJA min. footprint - - 420 2 1) 6 cm cooling area - - 350 Electrical Characteristics, at T = 25 C, unless otherwise specified j Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain-source breakdown voltage V -60 - - V (BR)DSS V = 0 V, I = -250 A GS D Gate threshold voltage, V = V -1 -1.5 -2 V GS DS GS(th) I = -20 A D Zero gate voltage drain current A I DSS V = -60 V, V = 0 V, T = 25 C - -0.1 -1 DS GS j V = -60 V, V = 0 V, T = 125 C - -10 -100 DS GS j Gate-source leakage current - -10 -100 nA I GSS V = -20 V, V = 0 V GS DS Drain-source on-state resistance R - 10.5 25 W DS(on) V = -2.7 V, I = -0.01 A GS D Drain-source on-state resistance - 6.9 12 R DS(on) V = -4.5 V, I = -0.12 A GS D Drain-source on-state resistance - 4.6 8 R DS(on) V = -10 V, I = -0.15 A GS D 1 2 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Rev 2.0 Page 2 201 6-0 6-21