Rev. 2.0 BSS87 SIPMOS Small-Signal-Transistor Product Summary Feature V 240 V DS N-Channel R 6 DS(on) Enhancement mode, Logic Level 0.26 I A D dv/dt rated Pb-free lead plating RoHS compliant 1 Qualified according to AEC Q101 2 3 HalogenfreeaccordingtoIE C61249221 2 VPS05558 Type Package Pb-free Tape and Reel Information Marking P-SOT89-4-2 Yes BSS87 H6327: 1000 pcs/reel KA Maximum Ratings, at T = 25 C, unless otherwise specified j Parameter Symbol Value Unit A Continuous drain current I D T =25C 0.26 A T =70C 0.21 A 1.04 Pulsed drain current I D puls T =25C A 6 kV/s Reverse diode dv/dt dv/dt I =0.26A, V =192V, di/dt=200A/s, T =150C S DS jmax V Gate source voltage V 20 GS ESD class (JESD22-A114-HBM) 1A (>250V, <500V) 1 W Power dissipation, related to min. footprint P tot T =25C A C Operating and storage temperature T , T -55... +150 j stg IEC climatic category DIN IEC 68-1 55/150/56 Page 1 2016-05-30Rev. 2.0 BSS87 Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics - - 10 K/W Thermal resistance, junction - case R thJC (Pin 2) SMD version, device on PCB: R thJA min. footprint - - 125 2 1) 6 cm cooling area - - 70 Electrical Characteristics, at T = 25 C, unless otherwise specified j Parameter Symbol Values Unit min. typ. max. Static Characteristics 240 - - V Drain-source breakdown voltage V (BR)DSS V =0, I =250A GS D 0.8 1.2 1.8 Gate threshold voltage, V = V V GS DS GS(th) I =108A D A Zero gate voltage drain current I DSS V =240V, V =0, T =25C - - 0.1 DS GS j V =240V, V =0, T =150C - - 100 DS GS j - - 10 nA Gate-source leakage current I GSS V =20V, V =0 GS DS - 4.6 7.5 Drain-source on-state resistance R DS(on) V =4.5V, I =0.24A GS D - 3.9 6 Drain-source on-state resistance R DS(on) V =10V, I =0.26A GS D 1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2016-05-30