X-On Electronics has gained recognition as a prominent supplier of BSV236SPH6327XT MOSFETs across the USA, India, Europe, Australia, and various other global locations. BSV236SPH6327XT MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

BSV236SPH6327XT Infineon

BSV236SPH6327XT electronic component of Infineon
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See Product Specifications
Part No.BSV236SPH6327XT
Manufacturer: Infineon
Category: MOSFETs
Description: MOSFET OptiMOS -P Small Signal Transistor
Datasheet: BSV236SPH6327XT Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.3443 ea
Line Total: USD 0.34 
Availability - 5881
Ship by Mon. 30 Dec to Wed. 01 Jan
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
5881
Ship by Mon. 30 Dec to Wed. 01 Jan
MOQ : 1
Multiples : 1
1 : USD 0.3443
10 : USD 0.2849
100 : USD 0.1947
1000 : USD 0.1166
3000 : USD 0.1078
9000 : USD 0.0957
24000 : USD 0.0935
45000 : USD 0.0913
99000 : USD 0.0891

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Gate Charge Qg
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Width
Forward Transconductance - Min
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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We are delighted to provide the BSV236SPH6327XT from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BSV236SPH6327XT and other electronic components in the MOSFETs category and beyond.

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BSV 236SP OptiMOS -P Small-Signal-Transistor Product Summary Feature V -20 V DS P-Channel R 175 m DS(on) Enhancement mode I -1.5 A D Super Logic Level (2.5 V rated) PG-SOT-363 150C operating temperature 4 Avalanche rated 5 6 dv/dt rated 3 2 1 VPS05604 Qualified according to AEC Q101 Halogen-free according to IEC61249-2-21 Drain pin 1,2, 5,6 Gate pin 3 Type Package Tape and Reel inf Marking Source BSV 236SP PG-SOT-363 H6327:3000pcs/r. pin 4 X2s Maximum Ratings,at T = 25 C, unless otherwise specified j Parameter Symbol Value Unit A Continuous drain current I D T =25C -1.5 A T =70C -1.2 A -6 Pulsed drain current I D puls T =25C A 9.5 mJ Avalanche energy, single pulse E AS I =-1.5 A , V =-10V, R =25 D DD GS -6 kV/s Reverse diode dv/dt dv/dt I =-1.5A, V =-16V, di/dt=200A/s, T =150C S DS jmax V Gate source voltage V 12 GS 0.56 W Power dissipation P tot T =25C A C Operating and storage temperature T , T -55... +150 j stg IEC climatic category DIN IEC 68-1 55/150/56 ESD Class Class 0 JESD22-A114-HBM Rev 1.5 Page 1 2011-07-14 BSV 236SP Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics - - 90 K/W Thermal resistance, junction - soldering point R thJS SMD version, device on PCB: R thJA min. footprint - - 220 2 1) 6 cm cooling area - - 110 Electrical Characteristics, at T = 25 C, unless otherwise specified j Parameter Symbol Values Unit min. typ. max. Static Characteristics -20 - - V Drain-source breakdown voltage V (BR)DSS V =0, I =-250A GS D -0.6 -0.9 -1.2 Gate threshold voltage, V = V V GS DS GS(th) I =-8A D A Zero gate voltage drain current I DSS V =-20V, V =0, T =25C - -0.1 -1 DS GS j V =-20V, V =0, T =150C - -10 -100 DS GS j - -10 -100 nA Gate-source leakage current I GSS V =-12V, V =0 GS DS - 193 285 Drain-source on-state resistance R m DS(on) V =-2.5V, I =-0.8A GS D - 131 175 Drain-source on-state resistance R DS(on) V =-4.5, I =-1.5A GS D 1 2 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air t 10 sec. Rev 1.5 Page 2 2011-07-14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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