BSZ018NE2LSI TM OptiMOS Power-MOSFET Product Summary Features V 25 V DS Optimized for high performance Buck converter R 1.8 mW DS(on),max Monolithic integrated Schottky like diode A I 40 D Very low on-resistance R V =4.5 V DS(on) GS Q 23 nC OSS 100% avalanche tested 36 nC Q (0V..10V) G N-channel PG-TSDSON-8 1) (fused leads) Qualified according to JEDEC for target applications Pb-free lead plating RoHS compliant Halogen-free according to IEC61249-2-21 Type Package Marking BSZ018NE2LSI PG-TSDSON-8 (fused leads) 018NE2I Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit I V =10 V, T =25C Continuous drain current 40 A D GS C V =10 V, T =100C 40 GS C V =4.5 V, T =25C 40 GS C V =4.5 V, GS 40 T =100C C V =4.5 V, T =25C, GS A 22 2) R =60K/W thJA 3) I T =25C 160 Pulsed drain current D,pulse C 4) I T =25C 20 Avalanche current, single pulse AS C E I =20A, R =25W Avalanche energy, single pulse 80 mJ AS D GS Gate source voltage V 20 V GS 1) J-STD20 and JESD22 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. 3) See figure 3 for more detailed information Rev. 2.1 page 1 2013-04-25 BSZ018NE2LSI Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit Power dissipation P T =25C 69 W tot C T =25 C, A 2.1 2) R =60K/W thJA T , T Operating and storage temperature -55 ... 150 C j stg IEC climatic category DIN IEC 68-1 55/150/56 Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics R Thermal resistance, junction - case - - 1.8 K/W thJC 2 2) Device on PCB R - - 60 6 cm cooling area thJA Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics Drain-source breakdown voltage V V =0V, I =10mA 25 - - V (BR)DSS GS D dV Breakdown voltage temperature I =10mA, referenced (BR)DSS D - 15 - mV/K coefficient /dT to 25C j V V =V , I =250A Gate threshold voltage 1.2 - 2.0 V GS(th) DS GS D V =20V, V =0V, DS GS I Zero gate voltage drain current - - 0.5 mA DSS T =25C j V =20V, V =0V, DS GS - 2 - T =125C j I V =20V, V =0V Gate-source leakage current - 10 100 nA GSS GS DS Drain-source on-state resistance R V =4.5V, I =20A - 2.0 2.5 mW DS(on) GS D V =10V, I =20A - 1.5 1.8 GS D R Gate resistance 0.4 0.8 1.6 W G V >2 I R , DS D DS(on)max g Transconductance 50 100 - S fs I =20A D Rev. 2.1 page 2 2013-04-25