X-On Electronics has gained recognition as a prominent supplier of BSZ018NE2LSIATMA1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. BSZ018NE2LSIATMA1 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

BSZ018NE2LSIATMA1 Infineon

BSZ018NE2LSIATMA1 electronic component of Infineon
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Part No.BSZ018NE2LSIATMA1
Manufacturer: Infineon
Category: MOSFETs
Description: Transistor: N-MOSFET; unipolar; 25V; 40A; 69W; PG-TSDSON-8
Datasheet: BSZ018NE2LSIATMA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.4905 ea
Line Total: USD 1.49 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Wed. 01 Jan to Tue. 07 Jan
MOQ : 1
Multiples : 1
1 : USD 1.4905
10 : USD 1.3322
100 : USD 1.2371
500 : USD 1.0675
1000 : USD 0.9074
5000 : USD 0.8921

0
Ship by Wed. 01 Jan to Tue. 07 Jan
MOQ : 5000
Multiples : 5000
5000 : USD 1.0896

0
Ship by Wed. 08 Jan to Mon. 13 Jan
MOQ : 1
Multiples : 1
1 : USD 3.8357
10 : USD 3.6532
30 : USD 3.5457
100 : USD 3.4346
500 : USD 3.2215
1000 : USD 3.1984

0
Ship by Mon. 30 Dec to Wed. 01 Jan
MOQ : 1
Multiples : 1
1 : USD 1.9629
14 : USD 1.1142
38 : USD 1.0537

   
Manufacturer
Product Category
Technology
Polarisation
Case
Mounting
Type Of Transistor
Drain-Source Voltage
On-State Resistance
Drain Current
Gate-Source Voltage
Power Dissipation
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BSZ018NE2LSIATMA1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BSZ018NE2LSIATMA1 and other electronic components in the MOSFETs category and beyond.

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BSZ018NE2LSI TM OptiMOS Power-MOSFET Product Summary Features V 25 V DS Optimized for high performance Buck converter R 1.8 mW DS(on),max Monolithic integrated Schottky like diode A I 40 D Very low on-resistance R V =4.5 V DS(on) GS Q 23 nC OSS 100% avalanche tested 36 nC Q (0V..10V) G N-channel PG-TSDSON-8 1) (fused leads) Qualified according to JEDEC for target applications Pb-free lead plating RoHS compliant Halogen-free according to IEC61249-2-21 Type Package Marking BSZ018NE2LSI PG-TSDSON-8 (fused leads) 018NE2I Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit I V =10 V, T =25C Continuous drain current 40 A D GS C V =10 V, T =100C 40 GS C V =4.5 V, T =25C 40 GS C V =4.5 V, GS 40 T =100C C V =4.5 V, T =25C, GS A 22 2) R =60K/W thJA 3) I T =25C 160 Pulsed drain current D,pulse C 4) I T =25C 20 Avalanche current, single pulse AS C E I =20A, R =25W Avalanche energy, single pulse 80 mJ AS D GS Gate source voltage V 20 V GS 1) J-STD20 and JESD22 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. 3) See figure 3 for more detailed information Rev. 2.1 page 1 2013-04-25 BSZ018NE2LSI Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit Power dissipation P T =25C 69 W tot C T =25 C, A 2.1 2) R =60K/W thJA T , T Operating and storage temperature -55 ... 150 C j stg IEC climatic category DIN IEC 68-1 55/150/56 Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics R Thermal resistance, junction - case - - 1.8 K/W thJC 2 2) Device on PCB R - - 60 6 cm cooling area thJA Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics Drain-source breakdown voltage V V =0V, I =10mA 25 - - V (BR)DSS GS D dV Breakdown voltage temperature I =10mA, referenced (BR)DSS D - 15 - mV/K coefficient /dT to 25C j V V =V , I =250A Gate threshold voltage 1.2 - 2.0 V GS(th) DS GS D V =20V, V =0V, DS GS I Zero gate voltage drain current - - 0.5 mA DSS T =25C j V =20V, V =0V, DS GS - 2 - T =125C j I V =20V, V =0V Gate-source leakage current - 10 100 nA GSS GS DS Drain-source on-state resistance R V =4.5V, I =20A - 2.0 2.5 mW DS(on) GS D V =10V, I =20A - 1.5 1.8 GS D R Gate resistance 0.4 0.8 1.6 W G V >2 I R , DS D DS(on)max g Transconductance 50 100 - S fs I =20A D Rev. 2.1 page 2 2013-04-25

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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