X-On Electronics has gained recognition as a prominent supplier of BSZ018NE2LSIXT MOSFETs across the USA, India, Europe, Australia, and various other global locations. BSZ018NE2LSIXT MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

BSZ018NE2LSIXT Infineon

Name: BSZ018NE2LSIXT
Brand: Infineon
SKU: BSZ018NE2LSIXT_Infineon
Availability: OutOfStock
Rating: 5 (11 reviews)

BSZ018NE2LSIXT electronic component of Infineon

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See Product Specifications

Part No.	BSZ018NE2LSIXT
Manufacturer:	Infineon
Category:	MOSFETs
Description:	MOSFET OptiMOS Power MOSFET
Datasheet:	BSZ018NE2LSIXT Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

5000: USD 0.9218 ea
Line Total: USD 4609

Availability - 0

MOQ: 5000 Multiples: 5000
Pack Size: 5000

BSZ018NE2LSIXT More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Wed. 01 Jan to Tue. 07 Jan MOQ : 5000 Multiples : 5000	5000 : USD 0.9106

0 Ship by Mon. 30 Dec to Wed. 01 Jan MOQ : 5000 Multiples : 5000	5000 : USD 0.9218

Specifications

Manufacturer Infineon Infineon
Product Category MOSFETs MOSFETs
RoHS - XON Y Y
Transistor Polarity N - Channel N - Channel
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 150 C + 150 C
Mounting Style Smd/Smt Smd/Smt
Package / Case PG - TSDSON - 8 PG - TSDSON - 8
Packaging Reel Reel
Tradename Optimos Optimos
Configuration Single Quad Drain Triple Source Single Quad Drain Triple Source
Series Bsz018ne2 Bsz018ne2
Brand Infineon Technologies Infineon Technologies
Continuous Drain Current 40 A 40 A
Drain-Source Breakdown Voltage 25 V 25 V
Forward Transconductance - Min 140 S 140 S
Gate-Source Breakdown Voltage +/- 20 V +/- 20 V
Power Dissipation 69 W 69 W
Rds On 1.8 Mohms 1.8 Mohms
Fall Time 3.4 ns 3.4 ns
Gate Charge Qg 39 nC 39 nC
Rise Time 4.4 ns 4.4 ns
Factory Pack Quantity : 5000 5000
Typical Turn-Off Delay Time 26 ns 26 ns

We are delighted to provide the BSZ018NE2LSIXT from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BSZ018NE2LSIXT and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

BSZ018NE2LS MOSFET TM TSDSON-8 FL (S3O8) OptiMOS Power-MOSFET, 25 V Features Optimized for high performance Buck converter (Server,VGA) Very Low FOMQOSS for High Frequency SMPS Low FOM for High Frequency SMPS SW Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R V =4.5 V DS(on) GS 100% avalanche tested Superior thermal resistance N-channel 1) Qualified according to JEDEC for target applications Pb-free lead plating RoHS compliant Halogen-free according to IEC61249-2-21 S1 8D S2 7D Table 1 Key Performance Parameters S3 6D Parameter Value Unit G4 5D V 25 V DS R V =10 V 1.8 m DS(on),max GS R V =4.5 V 2.4 m DS(on),max GS I D 153 A Type / Ordering Code Package Marking Related Links BSZ018NE2LS PG-TSDSON-8 FL 018NE2L - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev. 2.4, 2020-11-13TM OptiMOS Power-MOSFET, 25 V BSZ018NE2LS Table of Contents Description . 1 Maximum ratings 3 Thermal characteristics 3 Electrical characteristics . 4 Electrical characteristics diagrams . 6 Package Outlines . 10 Revision History 11 Trademarks . 11 Disclaimer 11 Final Data Sheet 2 Rev. 2.4, 2020-11-13

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

CYP may also be referenced as

Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION

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